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Title: Metal-based passivation-assisted plasma etching of III-v semiconductors

Abstract

According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1840499
Patent Number(s):
11133190
Application Number:
15/971,999
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 05/04/2018
Country of Publication:
United States
Language:
English

Citation Formats

Harrison, Sara Elizabeth, Frye, Clint, Nikolic, Rebecca J., Shao, Qinghui, and Voss, Lars F.. Metal-based passivation-assisted plasma etching of III-v semiconductors. United States: N. p., 2021. Web.
Harrison, Sara Elizabeth, Frye, Clint, Nikolic, Rebecca J., Shao, Qinghui, & Voss, Lars F.. Metal-based passivation-assisted plasma etching of III-v semiconductors. United States.
Harrison, Sara Elizabeth, Frye, Clint, Nikolic, Rebecca J., Shao, Qinghui, and Voss, Lars F.. Tue . "Metal-based passivation-assisted plasma etching of III-v semiconductors". United States. https://www.osti.gov/servlets/purl/1840499.
@article{osti_1840499,
title = {Metal-based passivation-assisted plasma etching of III-v semiconductors},
author = {Harrison, Sara Elizabeth and Frye, Clint and Nikolic, Rebecca J. and Shao, Qinghui and Voss, Lars F.},
abstractNote = {According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {9}
}

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