Title: Methods for depositing III-V compositions on silicon

Abstract

The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.

Inventors:

Warren, Emily Lowell; Saenz, Theresa Emily; Zimmerman, Jeramy David

Issue Date:

2021-09-14

Research Org.:

National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1840448

Patent Number(s):

11120990

Application Number:

16/933,847

Assignee:

Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02373 - {Group 14 semiconducting materials}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0243 - {Surface structure}
H01L21/02433 - {Crystal orientation}
H01L21/02538 - {Group 13/15 materials}
H01L21/02543 - {Phosphides}
H01L21/02546 - {Arsenides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02647 - {Lateral overgrowth}
H01L21/02658 - {Pretreatments
H01L29/0657 - {characterised by the shape of the body}
H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/26 - including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 {, e.g. alloys}

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DOE Contract Number:  

AC36-08GO28308

Resource Type:

Patent

Resource Relation:

Patent File Date: 07/20/2020

Country of Publication:

United States

Language:

English