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Title: Atomic layer deposition of fluoride thin films

Abstract

A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1840416
Patent Number(s):
11111578
Application Number:
16/790,559
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 02/13/2020
Country of Publication:
United States
Language:
English

Citation Formats

Elam, Jeffrey W., Mane, Anil U., and Gebhard, Sr., Michael John. Atomic layer deposition of fluoride thin films. United States: N. p., 2021. Web.
Elam, Jeffrey W., Mane, Anil U., & Gebhard, Sr., Michael John. Atomic layer deposition of fluoride thin films. United States.
Elam, Jeffrey W., Mane, Anil U., and Gebhard, Sr., Michael John. Tue . "Atomic layer deposition of fluoride thin films". United States. https://www.osti.gov/servlets/purl/1840416.
@article{osti_1840416,
title = {Atomic layer deposition of fluoride thin films},
author = {Elam, Jeffrey W. and Mane, Anil U. and Gebhard, Sr., Michael John},
abstractNote = {A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {9}
}

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