DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds

Abstract

Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.

Inventors:
Issue Date:
Research Org.:
US Dept. of Energy (USDOE), Washington, DC (United States)
Sponsoring Org.:
USDOE; US Office of Naval Research (ONR)
OSTI Identifier:
1840408
Patent Number(s):
11110681
Application Number:
16/454,240
Assignee:
U.S. Department of Energy (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
DOE Contract Number:  
AC11-98PN38206; N00024-98-C-4064
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/27/2019
Country of Publication:
United States
Language:
English

Citation Formats

Cockeram, Brian V. Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds. United States: N. p., 2021. Web.
Cockeram, Brian V. Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds. United States.
Cockeram, Brian V. Tue . "Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds". United States. https://www.osti.gov/servlets/purl/1840408.
@article{osti_1840408,
title = {Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds},
author = {Cockeram, Brian V.},
abstractNote = {Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {9}
}

Works referenced in this record:

SiC sintered body having metallized layer and production method thereof
patent, May 1987


System and Method for Producing Chemicals at High Temperature
patent-application, September 2015


Non-Contaminating Bonding Material for Segmented Silicon Carbide Liner in a Fluidized Bed Reactor
patent-application, February 2016


Recuperator tube assembly
patent, February 1987