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Title: Strain control in optoelectronic devices

Abstract

A coating having a mismatched coefficient of thermal expansion is applied to an underlying light emitting diode (LED) or laser diode (LD), such that as the temperature of the device changes, a varying level of strain is introduced to the underlying LED or LD. Because strain can also adjust the effective bandgap energy (and hence emission wavelength) of the device, the external strain-inducing coating can act to either compensate for the wavelength shift due to temperature (resulting in reduced dλ/dT) or accentuate it (resulting in increased dλ/dT). By proper selection of coating material and geometry, full control over dλ/dT can be achieved.

Inventors:
;
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1823908
Patent Number(s):
10992105
Application Number:
16/434,236
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/07/2019
Country of Publication:
United States
Language:
English

Citation Formats

Voss, Lars F., and Leisher, Paul O. Strain control in optoelectronic devices. United States: N. p., 2021. Web.
Voss, Lars F., & Leisher, Paul O. Strain control in optoelectronic devices. United States.
Voss, Lars F., and Leisher, Paul O. Tue . "Strain control in optoelectronic devices". United States. https://www.osti.gov/servlets/purl/1823908.
@article{osti_1823908,
title = {Strain control in optoelectronic devices},
author = {Voss, Lars F. and Leisher, Paul O.},
abstractNote = {A coating having a mismatched coefficient of thermal expansion is applied to an underlying light emitting diode (LED) or laser diode (LD), such that as the temperature of the device changes, a varying level of strain is introduced to the underlying LED or LD. Because strain can also adjust the effective bandgap energy (and hence emission wavelength) of the device, the external strain-inducing coating can act to either compensate for the wavelength shift due to temperature (resulting in reduced dλ/dT) or accentuate it (resulting in increased dλ/dT). By proper selection of coating material and geometry, full control over dλ/dT can be achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {4}
}

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Three dimensional strained semiconductors
patent, November 2016


Optoelectronic devices
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Strain modulated nanostructures for optoelectronic devices and associated systems and methods
patent-application, November 2010


Electromagnetic-wave suppressing radiator sheet and electronic apparatus
patent, August 2011


Three Dimensional Strained Semiconductors
patent-application, December 2013


Semiconductor light emitting element and method for fabricating the same
patent-application, May 2002


Silicon compatible integrated light communicator
patent, January 2011


Micro light-emitting diode display panel and manufacturing method thereof
patent-application, August 2018


LED light source, its manufacturing method, and LED-based photolithography apparatus and method
patent-application, December 2010