Semiconducting devices containing quantum wells
Abstract
The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1823902
- Patent Number(s):
- 10991847
- Application Number:
- 16/734,994
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 01/06/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Steiner, Myles Aaron, and France, Ryan Matthew. Semiconducting devices containing quantum wells. United States: N. p., 2021.
Web.
Steiner, Myles Aaron, & France, Ryan Matthew. Semiconducting devices containing quantum wells. United States.
Steiner, Myles Aaron, and France, Ryan Matthew. Tue .
"Semiconducting devices containing quantum wells". United States. https://www.osti.gov/servlets/purl/1823902.
@article{osti_1823902,
title = {Semiconducting devices containing quantum wells},
author = {Steiner, Myles Aaron and France, Ryan Matthew},
abstractNote = {The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {4}
}