Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides
Abstract
A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE; National Science Foundation (NSF)
- OSTI Identifier:
- 1823894
- Patent Number(s):
- 10988842
- Application Number:
- 16/088,046
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- EFMA1542863; SC0001088
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/17/2018
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Modtland, Brian J., Kong, Jing, Baldo, Marc A., Navarro-Moratalla, Efren, and Ji, Xiang. Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides. United States: N. p., 2021.
Web.
Modtland, Brian J., Kong, Jing, Baldo, Marc A., Navarro-Moratalla, Efren, & Ji, Xiang. Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides. United States.
Modtland, Brian J., Kong, Jing, Baldo, Marc A., Navarro-Moratalla, Efren, and Ji, Xiang. Tue .
"Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides". United States. https://www.osti.gov/servlets/purl/1823894.
@article{osti_1823894,
title = {Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides},
author = {Modtland, Brian J. and Kong, Jing and Baldo, Marc A. and Navarro-Moratalla, Efren and Ji, Xiang},
abstractNote = {A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {4}
}
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Works referenced in this record:
Chemical vapor deposition method for fabricating two-dimensional materials
patent, August 2018
- Pickett, Nigel; Masala, Ombretta; Savjani, Nicky
- US Patent Document 10,062,568
Deposition system
patent-application, January 2012
- Beck, Markus E.; Bodke, Ashish; Bonne, Ulrich Alexander
- US Patent Application 13/189251; 20120021556