Metal foils with ordered crystal structure and method for producing metal foils
Abstract
A method for producing a metal foil comprising depositing metal onto an oxidizable substrate to form a metal film on the substrate; oxidizing the substrate at an interface between the metal film and the substrate; and removing the metal film from the substrate to yield a metal foil. A method for forming a thin metal film comprising pre-polarizing a single-crystal Si substrate by application of a potential which is negative of a potential at which Si oxidizes, which pre-polarization occurs in the presence of metal ions to form metal growth nucleation sites on the substrate, followed by application of a potential at which both oxidation of Si and electrodeposition of the metal occur to grow the metal film and oxidize the Si to SiOx, which potential is more positive than the potential applied in the pre-polarization step.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Missouri, Columbia, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1823858
- Patent Number(s):
- 10980130
- Application Number:
- 16/178,201
- Assignee:
- The Curators of the University of Missouri (Columbia, MO)
- DOE Contract Number:
- FG02-08ER46518
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/01/2018
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Switzer, Jay A. Metal foils with ordered crystal structure and method for producing metal foils. United States: N. p., 2021.
Web.
Switzer, Jay A. Metal foils with ordered crystal structure and method for producing metal foils. United States.
Switzer, Jay A. Tue .
"Metal foils with ordered crystal structure and method for producing metal foils". United States. https://www.osti.gov/servlets/purl/1823858.
@article{osti_1823858,
title = {Metal foils with ordered crystal structure and method for producing metal foils},
author = {Switzer, Jay A.},
abstractNote = {A method for producing a metal foil comprising depositing metal onto an oxidizable substrate to form a metal film on the substrate; oxidizing the substrate at an interface between the metal film and the substrate; and removing the metal film from the substrate to yield a metal foil. A method for forming a thin metal film comprising pre-polarizing a single-crystal Si substrate by application of a potential which is negative of a potential at which Si oxidizes, which pre-polarization occurs in the presence of metal ions to form metal growth nucleation sites on the substrate, followed by application of a potential at which both oxidation of Si and electrodeposition of the metal occur to grow the metal film and oxidize the Si to SiOx, which potential is more positive than the potential applied in the pre-polarization step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {4}
}