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Title: GaN-based threshold switching device and memory diode

Abstract

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Inventors:
; ;
Issue Date:
Research Org.:
Arizona State Univ., Scottsdale, AZ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1805683
Patent Number(s):
10964749
Application Number:
16/666,978
Assignee:
Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)
DOE Contract Number:  
AR0000868
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/29/2019
Country of Publication:
United States
Language:
English

Citation Formats

Fu, Kai, Fu, Houqiang, and Zhao, Yuji. GaN-based threshold switching device and memory diode. United States: N. p., 2021. Web.
Fu, Kai, Fu, Houqiang, & Zhao, Yuji. GaN-based threshold switching device and memory diode. United States.
Fu, Kai, Fu, Houqiang, and Zhao, Yuji. Tue . "GaN-based threshold switching device and memory diode". United States. https://www.osti.gov/servlets/purl/1805683.
@article{osti_1805683,
title = {GaN-based threshold switching device and memory diode},
author = {Fu, Kai and Fu, Houqiang and Zhao, Yuji},
abstractNote = {A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {3}
}