GaN-based threshold switching device and memory diode
Abstract
A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Arizona State Univ., Scottsdale, AZ (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805683
- Patent Number(s):
- 10964749
- Application Number:
- 16/666,978
- Assignee:
- Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000868
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10/29/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Fu, Kai, Fu, Houqiang, and Zhao, Yuji. GaN-based threshold switching device and memory diode. United States: N. p., 2021.
Web.
Fu, Kai, Fu, Houqiang, & Zhao, Yuji. GaN-based threshold switching device and memory diode. United States.
Fu, Kai, Fu, Houqiang, and Zhao, Yuji. Tue .
"GaN-based threshold switching device and memory diode". United States. https://www.osti.gov/servlets/purl/1805683.
@article{osti_1805683,
title = {GaN-based threshold switching device and memory diode},
author = {Fu, Kai and Fu, Houqiang and Zhao, Yuji},
abstractNote = {A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {3}
}
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