Two-terminal electronic charge resistance switching device
Abstract
A two-terminal memory device and methods for its use are provided. In the device, a bottom electrode is electrically continuous with a first operating terminal, and a control gate electrode is electrically continuous with a second operating terminal. A stack of insulator layers comprising a hopping conduction layer and a tunnel layer is contactingly interposed between the bottom electrode and the control gate electrode. The tunnel layer is thinner than the hopping conduction layer, and it has a wider bandgap than the hopping conduction layer. The hopping conduction layer consists of a material that supports electron hopping transport.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1805639
- Patent Number(s):
- 10950790
- Application Number:
- 16/798,723
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/24/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Marinella, Matthew, and Agarwal, Sandeep. Two-terminal electronic charge resistance switching device. United States: N. p., 2021.
Web.
Marinella, Matthew, & Agarwal, Sandeep. Two-terminal electronic charge resistance switching device. United States.
Marinella, Matthew, and Agarwal, Sandeep. Tue .
"Two-terminal electronic charge resistance switching device". United States. https://www.osti.gov/servlets/purl/1805639.
@article{osti_1805639,
title = {Two-terminal electronic charge resistance switching device},
author = {Marinella, Matthew and Agarwal, Sandeep},
abstractNote = {A two-terminal memory device and methods for its use are provided. In the device, a bottom electrode is electrically continuous with a first operating terminal, and a control gate electrode is electrically continuous with a second operating terminal. A stack of insulator layers comprising a hopping conduction layer and a tunnel layer is contactingly interposed between the bottom electrode and the control gate electrode. The tunnel layer is thinner than the hopping conduction layer, and it has a wider bandgap than the hopping conduction layer. The hopping conduction layer consists of a material that supports electron hopping transport.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {3}
}
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