Gallidation assisted impurity doping
Abstract
In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805544
- Patent Number(s):
- 10930506
- Application Number:
- 16/446,460
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/19/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Voss, Lars, Dryden, Daniel Max, Frye, Clint, Harrison, Sara Elizabeth, Nikolic, Rebecca J., and Shao, Qinghui. Gallidation assisted impurity doping. United States: N. p., 2021.
Web.
Voss, Lars, Dryden, Daniel Max, Frye, Clint, Harrison, Sara Elizabeth, Nikolic, Rebecca J., & Shao, Qinghui. Gallidation assisted impurity doping. United States.
Voss, Lars, Dryden, Daniel Max, Frye, Clint, Harrison, Sara Elizabeth, Nikolic, Rebecca J., and Shao, Qinghui. Tue .
"Gallidation assisted impurity doping". United States. https://www.osti.gov/servlets/purl/1805544.
@article{osti_1805544,
title = {Gallidation assisted impurity doping},
author = {Voss, Lars and Dryden, Daniel Max and Frye, Clint and Harrison, Sara Elizabeth and Nikolic, Rebecca J. and Shao, Qinghui},
abstractNote = {In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 23 00:00:00 EST 2021},
month = {Tue Feb 23 00:00:00 EST 2021}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors
patent-application, March 2012
- Feigelson, Boris N.; Anderson, Travis; Kub, Francis J.
- US Patent Application 13/234699; 20120068188
Method for Performing Activation of Dopants in a Gan-Base Semiconductor Layer by Successive Implantations and Heat Treatments
patent-application, March 2016
- Agraffeil, Claire
- US Patent Application 14/846376; 20160093495
Nitride compound semiconductor light emitting device and method for producing the same
patent-application, October 2001
- Ueta, Yoshihiro; Yuasa, Takayuki; Ogawa, Atsushi
- US Patent Application 09/759312; 20010030329
Optoelectronic Device with Modulation Doping
patent-application, March 2015
- Jain, Rakesh; Shatalov, Maxim S.; Yang, Jinwei
- US Patent Application 14/475638; 20150060908
Method for Performing Activation of Dopants in a Gan-Base Semiconductor Layer
patent-application, March 2016
- Agraffeil, Claire
- US Patent Application 14/859860; 20160093510
Providing Group V and Group VI Over Pressure for Thermal Treatment of Compound Semiconductor Thein Films
patent-application, March 2013
- Srinivasan, Swaminathan T.
- US Patent Application 13/589355; 20130056793