Title: Arrays of high-aspect-ratio germanium nanostructures with nanoscale pitch and methods for the fabrication thereof

Abstract

Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.

Inventors:

Lagally, Max G.; Cavallo, Francesca; Mangu, Vijay Saradhi

Issue Date:

2021-02-23

Research Org.:

Wisconsin Alumni Research Foundation, Madison, WI (United States); Univ. of New Mexico, Albuquerque, NM (United States); Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:

1805542

Patent Number(s):

10930490

Application Number:

16/727,201

Assignee:

Wisconsin Alumni Research Foundation (WARF) (Madison, WI); The Regents of the University of New Mexico (Albuquerque, NM)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y40/00 - Manufacture or treatment of nanostructures

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G02B1/002 - {made of materials engineered to provide properties not available in nature, e.g. metamaterials}
G02B5/1809 - {with pitch less than or comparable to the wavelength}
G02B5/3075 - {for use in the UV

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02115 - {the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon}
H01L21/0277 - {Electrolithographic processes}
H01L21/3065 - Plasma etching
H01L21/3081 - {characterised by their composition, e.g. multilayer masks, materials}
H01L21/8258 - the substrate being a semiconductor, using a combination of technologies covered by {H01L21/8206, H01L21/8213} , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
H01L27/0886 - {including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
H01L29/16 - including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
H01L29/66795 - {with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

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DOE Contract Number:  

FG02-03ER46028

Resource Type:

Patent

Resource Relation:

Patent File Date: 12/26/2019

Country of Publication:

United States

Language:

English