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Title: Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties

Abstract

An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10−10 Siemens/cm to about 10−4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).

Inventors:
; ; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1805477
Patent Number(s):
10910559
Application Number:
16/427,597
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
SC0002633
Resource Type:
Patent
Resource Relation:
Patent File Date: 05/31/2019
Country of Publication:
United States
Language:
English

Citation Formats

Defferriere, Thomas, Kalaev, Dmitri, Tuller, Harry L., and Rupp, Jennifer Lilia. Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties. United States: N. p., 2021. Web.
Defferriere, Thomas, Kalaev, Dmitri, Tuller, Harry L., & Rupp, Jennifer Lilia. Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties. United States.
Defferriere, Thomas, Kalaev, Dmitri, Tuller, Harry L., and Rupp, Jennifer Lilia. Tue . "Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties". United States. https://www.osti.gov/servlets/purl/1805477.
@article{osti_1805477,
title = {Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties},
author = {Defferriere, Thomas and Kalaev, Dmitri and Tuller, Harry L. and Rupp, Jennifer Lilia},
abstractNote = {An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10−10 Siemens/cm to about 10−4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {2}
}