Hydride enhanced growth rates in hydride vapor phase epitaxy

Schulte, Kevin Louis; Ptak, Aaron Joseph; Simon, John David

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Hydride enhanced growth rates in hydride vapor phase epitaxy

Abstract

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Inventors:: Schulte, Kevin Louis; Ptak, Aaron Joseph; Simon, John David

Issue Date:: 2021-01-26

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1805437

Patent Number(s):: 10903389

Application Number:: 16/248,309

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Show more

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/301 - {AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C23C16/448 - characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C16/4488 - {by in situ generation of reactive gas by chemical or electrochemical reaction}
C23C16/45514 - {Mixing in close vicinity to the substrate}
C23C16/45561 - {Gas plumbing upstream of the reaction chamber}
C23C16/45578 - {Elongated nozzles, tubes with holes}
C23C16/4558 - {Perforated rings}
C23C16/46 - characterised by the method used for heating the substrate
C23C16/54 - Apparatus specially adapted for continuous coating

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/02 - Epitaxial-layer growth
C30B25/08 - Reaction chambers
C30B25/14 - Feed and outlet means for the gases
C30B25/16 - Controlling or regulating
C30B25/165 - {the flow of the reactive gases}
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B29/42 - Gallium arsenide

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

Show less

DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 01/15/2019

Country of Publication:: United States

Language:: English

Citation Formats


                    Schulte, Kevin Louis, Ptak, Aaron Joseph, and Simon, John David. Hydride enhanced growth rates in hydride vapor phase epitaxy.  United States: N. p., 2021. 
        Web.

Copy to clipboard


                    Schulte, Kevin Louis, Ptak, Aaron Joseph, & Simon, John David. Hydride enhanced growth rates in hydride vapor phase epitaxy.  United States.

Copy to clipboard


                    Schulte, Kevin Louis, Ptak, Aaron Joseph, and Simon, John David. Tue .  
        "Hydride enhanced growth rates in hydride vapor phase epitaxy".  United States.  https://www.osti.gov/servlets/purl/1805437.

Copy to clipboard


                    
@article{osti_1805437,

  title        = {Hydride enhanced growth rates in hydride vapor phase epitaxy},

  author       = {Schulte, Kevin Louis and Ptak, Aaron Joseph and Simon, John David},

  abstractNote = {Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2021},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Epitaxial composite and method of making
patent, January 1983

Manasevit, Harold M.
US Patent Document 4,368,098
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4368098

Gallium Trichloride Injection Scheme
patent-application, July 2009

Arena, Chantal; Werkhoven, Christiaan
US Patent Application 12/305534; 20090178611
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090178611

Method for Producing Group III Nitride Crystal, Group III Nitride Crystal, Semiconductor Device and Apparatus for Producing Group III Nitride Crystal
patent-application, September 2016

Mori, Yusuke; Imade, Mamoru; Yoshimura, Masahi
US Patent Application 15/028341; 20160268129
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160268129

Wafer scale thermal stress fixture and method
patent-application, August 2005

Aldridge, David M.; Mitchell, Lonnie D.; Roedig, Joseph L.
US Patent Application 10/769093; 20050167899
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050167899

Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device
patent-application, July 2010

Okahisa, Takuji; Kawase, Tomohiro; Uemura, Tomoki
US Patent Application 12/719719; 20100164070
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100164070

Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
patent, December 1984

Quinlan, Kenneth P.; Erstfeld, Thomas E.
US Patent Document 4,488,914
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4488914

Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
patent-application, October 2011

Hanawa, Hiroji; Maung, Kyawwin Jason; Brown, Karl
US Patent Application 13/092800; 20110259879
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110259879

Method of Forming In-Suite Pre-GaN Deposition Layer in HVPE
patent-application, November 2010

Melnik, Yuriy; Kojiri, Hidehiro; Kryliouk, Olga
US Patent Application 12/770306; 20100279020
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100279020

Manufacturing methods for semiconductor devices with multiple III-V material layers
patent-application, July 2004

Dmitriev, Vladimir A.; Tsvetkov, Denis V.; Pechnikov, A.
US Patent Application 10/623375; 20040137657
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040137657

HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
patent-application, January 2006

Dmitriev, Vladimir A.; MAslennikov, Viacheslav A.; Soukhoveev, Vitali
US Patent Application 11/173039; 20060011135
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20060011135

Method of depositing layers of semi-insulating gallium arsenide
patent, March 1981

Jolly, Stuart T.
US Patent Document 4,253,887
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4253887

Actuator for translational and rotary movement
patent, November 1997

Neff, Edward A.; Porteguise, Hans
US Patent Document 5,685,214
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5685214

Ceramic conveyor belt
patent, July 1994

Yuzawa, Yukio; Yamamoto, Yoshinori; Ohira, Hiroyuki
US Patent Document 5,330,046
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5330046

High throughput semiconductor deposition system
patent, January 2019

Young, David Levi; Ptak, Aaron Joseph; Kuech, Thomas F.
US Patent Document 10,192,740
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/10192740

System for the conveying and storage of containers of semiconductor wafers, and transfer mechanism
patent-application, March 2004

Poli, Bernard; Gaudon, Alain; Lero, Christophe
US Patent Application 10/655701; 20040047714
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040047714

Modern Hydride Vapor-Phase Epitaxy System & Methods
patent-application, June 2011

Solomon, Glenn S.; Miller, David J.
US Patent Application 12/649937; 20110155049
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110155049

High throughput semiconductor deposition system
patent, November 2017

Young, David Levi; Ptak, Aaron Joseph; Kuech, Thomas F.
US Patent Document 9,824,890
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9824890

High Throughput Semiconductor Deposition System
patent-application, November 2013

Young, David L.; Ptak, Aaron Joseph; Kuech, Thoms F.
US Patent Application 13/895190; 20130309848
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130309848

High Throughput Semiconductor Deposition System
patent-application, November 2015

Young, David L.; Ptak, Aaron Joseph; Kuech, Thomoas F.
US Patent Application 14/801551; 20150325430
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150325430

Apparatus and methods for controlling gas flows in a HVPE reactor
patent, August 2016

Dmitriev, Vladimir A.; Kovalenkov, Oleg; Ivantsov, Vladimir
US Patent Document 9,416,464
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9416464

Image quality measurements using linear array in specular mode
patent, September 2007

Mizes, Howard A.
US Patent Document 7,272,333
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7272333

High-purity alumina sintered body, high-purity alumina ball, jig for semiconductor, insulator, ball bearing, check valve, and method for manufacturing high-purity alumina sintered body
patent-application, January 2003

Niwa, Tomonori; Yogo, Tetsuji
US Patent Application 10/238602; 20030008765
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030008765

Similar Records in DOE Patents and OSTI.GOV collections:

Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

Patent Iwancizko, Eugene [Lafayette, CO]; Jones, Kim M [Arvada, CO]; Crandall, Richard S [Boulder, CO]; ...

The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
Full Text Available
Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Patent Han, Jung [Woodbridge, CT]; Su, Jie [New Haven, CT]

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.
Full Text Available
Method of varying a characteristic of an optical vertical cavity structure formed by metalorganic vapor phase epitaxy

Patent Hou, Hong Q [Albuquerque, NM]; Coltrin, Michael E [Albuquerque, NM]; Choquette, Kent D [Albuquerque, NM]

A process for forming an array of vertical cavity optical resonant structures wherein the structures in the array have different detection or emission wavelengths. The process uses selective area growth (SAG) in conjunction with annular masks of differing dimensions to control the thickness and chemical composition of the materials in the optical cavities in conjunction with a metalorganic vapor phase epitaxy (MOVPE) process to build these arrays.
Full Text Available
Forming iron nitride hard magnetic materials using chemical vapor deposition or liquid phase epitaxy

Patent Wang, Jian-Ping; Jiang, Yanfeng

A hard magnetic material includes α″ Fe16N2. In some examples, the hard magnetic material may be formed by a technique utilizing chemical vapor deposition or liquid phase epitaxy.
Full Text Available
Forming iron nitride hard magnetic materials using chemical vapor deposition or liquid phase epitaxy

Patent Wang, Jian-Ping; Jiang, YanFeng

The disclosure describes techniques for forming hard magnetic materials including α″-Fe16N2 using chemical vapor deposition or liquid phase epitaxy and hard materials formed according to these techniques. A method comprises heating an iron source to form a vapor comprising an iron-containing compound; depositing iron from the vapor comprising the iron-containing compound and nitrogen from a vapor comprising a nitrogen-containing compound on a substrate to form a layer comprising iron and nitrogen; and annealing the layer comprising iron and nitrogen to form at least some crystals comprising α″-Fe16N2.
Full Text Available

Similar Records

Title: Hydride enhanced growth rates in hydride vapor phase epitaxy

Abstract

Citation Formats

Epitaxial composite and method of making patent, January 1983

Gallium Trichloride Injection Scheme patent-application, July 2009

Method for Producing Group III Nitride Crystal, Group III Nitride Crystal, Semiconductor Device and Apparatus for Producing Group III Nitride Crystal patent-application, September 2016

Wafer scale thermal stress fixture and method patent-application, August 2005

Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device patent-application, July 2010

Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch patent, December 1984

Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers patent-application, October 2011

Method of Forming In-Suite Pre-GaN Deposition Layer in HVPE patent-application, November 2010

Manufacturing methods for semiconductor devices with multiple III-V material layers patent-application, July 2004

HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run patent-application, January 2006

Method of depositing layers of semi-insulating gallium arsenide patent, March 1981

Actuator for translational and rotary movement patent, November 1997

Ceramic conveyor belt patent, July 1994

High throughput semiconductor deposition system patent, January 2019

System for the conveying and storage of containers of semiconductor wafers, and transfer mechanism patent-application, March 2004

Modern Hydride Vapor-Phase Epitaxy System & Methods patent-application, June 2011

High throughput semiconductor deposition system patent, November 2017

High Throughput Semiconductor Deposition System patent-application, November 2013

High Throughput Semiconductor Deposition System patent-application, November 2015

Apparatus and methods for controlling gas flows in a HVPE reactor patent, August 2016

Image quality measurements using linear array in specular mode patent, September 2007

High-purity alumina sintered body, high-purity alumina ball, jig for semiconductor, insulator, ball bearing, check valve, and method for manufacturing high-purity alumina sintered body patent-application, January 2003

Epitaxial composite and method of making
patent, January 1983

Gallium Trichloride Injection Scheme
patent-application, July 2009

Method for Producing Group III Nitride Crystal, Group III Nitride Crystal, Semiconductor Device and Apparatus for Producing Group III Nitride Crystal
patent-application, September 2016

Wafer scale thermal stress fixture and method
patent-application, August 2005

Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device
patent-application, July 2010

Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
patent, December 1984

Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
patent-application, October 2011

Method of Forming In-Suite Pre-GaN Deposition Layer in HVPE
patent-application, November 2010

Manufacturing methods for semiconductor devices with multiple III-V material layers
patent-application, July 2004

HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
patent-application, January 2006

Method of depositing layers of semi-insulating gallium arsenide
patent, March 1981

Actuator for translational and rotary movement
patent, November 1997

Ceramic conveyor belt
patent, July 1994

High throughput semiconductor deposition system
patent, January 2019

System for the conveying and storage of containers of semiconductor wafers, and transfer mechanism
patent-application, March 2004

Modern Hydride Vapor-Phase Epitaxy System & Methods
patent-application, June 2011

High throughput semiconductor deposition system
patent, November 2017

High Throughput Semiconductor Deposition System
patent-application, November 2013

High Throughput Semiconductor Deposition System
patent-application, November 2015

Apparatus and methods for controlling gas flows in a HVPE reactor
patent, August 2016

Image quality measurements using linear array in specular mode
patent, September 2007

High-purity alumina sintered body, high-purity alumina ball, jig for semiconductor, insulator, ball bearing, check valve, and method for manufacturing high-purity alumina sintered body
patent-application, January 2003