Hydride enhanced growth rates in hydride vapor phase epitaxy
Abstract
Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805437
- Patent Number(s):
- 10903389
- Application Number:
- 16/248,309
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 01/15/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Schulte, Kevin Louis, Ptak, Aaron Joseph, and Simon, John David. Hydride enhanced growth rates in hydride vapor phase epitaxy. United States: N. p., 2021.
Web.
Schulte, Kevin Louis, Ptak, Aaron Joseph, & Simon, John David. Hydride enhanced growth rates in hydride vapor phase epitaxy. United States.
Schulte, Kevin Louis, Ptak, Aaron Joseph, and Simon, John David. Tue .
"Hydride enhanced growth rates in hydride vapor phase epitaxy". United States. https://www.osti.gov/servlets/purl/1805437.
@article{osti_1805437,
title = {Hydride enhanced growth rates in hydride vapor phase epitaxy},
author = {Schulte, Kevin Louis and Ptak, Aaron Joseph and Simon, John David},
abstractNote = {Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {1}
}
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