Three dimensional vertically structured MISFET/MESFET

Conway, Adam; Harrison, Sara Elizabeth; Nikolic, Rebecca J.; Shao, Qinghui; Voss, Lars; Chowdhury, Srabanti

Title: Three dimensional vertically structured MISFET/MESFET

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Abstract

According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.

Inventors:: Conway, Adam; Harrison, Sara Elizabeth; Nikolic, Rebecca J.; Shao, Qinghui; Voss, Lars; Chowdhury, Srabanti

Issue Date:: 2021-01-26

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1805436

Patent Number(s):: 10903371

Application Number:: 14/990,561

Assignee:: Lawrence Livermore National Security, LLC (Livermore, CA); The Regents of the University of California (Oakland, CA)

DOE Contract Number:: AC52-07NA27344

Resource Type:: Patent

Resource Relation:: Patent File Date: 01/07/2016

Country of Publication:: United States

Language:: English

Citation Formats


                    Conway, Adam, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui, Voss, Lars, and Chowdhury, Srabanti. Three dimensional vertically structured MISFET/MESFET.  United States: N. p., 2021. 
        Web.

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                    Conway, Adam, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui, Voss, Lars, & Chowdhury, Srabanti. Three dimensional vertically structured MISFET/MESFET.  United States.

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                    Conway, Adam, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui, Voss, Lars, and Chowdhury, Srabanti. Tue .  
        "Three dimensional vertically structured MISFET/MESFET".  United States.  https://www.osti.gov/servlets/purl/1805436.

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@article{osti_1805436,

  title        = {Three dimensional vertically structured MISFET/MESFET},

  author       = {Conway, Adam and Harrison, Sara Elizabeth and Nikolic, Rebecca J. and Shao, Qinghui and Voss, Lars and Chowdhury, Srabanti},

  abstractNote = {According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2021},

  month        = {1}

}

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