Three dimensional vertically structured MISFET/MESFET

Conway, Adam; Harrison, Sara Elizabeth; Nikolic, Rebecca J.; Shao, Qinghui; Voss, Lars; Chowdhury, Srabanti

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Title: Three dimensional vertically structured MISFET/MESFET

Abstract

According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.

Inventors:: Conway, Adam; Harrison, Sara Elizabeth; Nikolic, Rebecca J.; Shao, Qinghui; Voss, Lars; Chowdhury, Srabanti

Issue Date:: 2021-01-26

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1805436

Patent Number(s):: 10903371

Application Number:: 14/990,561

Assignee:: Lawrence Livermore National Security, LLC (Livermore, CA); The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/045 - {by their particular orientation of crystalline planes}
H01L29/0649 - {Dielectric regions, e.g. SiO2 regions, air gaps}
H01L29/0657 - {characterised by the shape of the body}
H01L29/1066 - {Gate region of field-effect devices with PN junction gate}
H01L29/1095 - {Body region, i.e. base region, of DMOS transistors or IGBTs
H01L29/1608 - {Silicon carbide}
H01L29/2003 - {Nitride compounds}
H01L29/66068 - {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
H01L29/66924 - {with an active layer made of a group 13/15 material
H01L29/7788 - {Vertical transistors}
H01L29/7789 - {the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body}
H01L29/8083 - {Vertical transistors
H01L29/8122 - {Vertical transistors

Show less

DOE Contract Number:: AC52-07NA27344

Resource Type:: Patent

Resource Relation:: Patent File Date: 01/07/2016

Country of Publication:: United States

Language:: English

Subject:: 24 POWER TRANSMISSION AND DISTRIBUTION

Citation Formats


                    Conway, Adam, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui, Voss, Lars, and Chowdhury, Srabanti. Three dimensional vertically structured MISFET/MESFET.  United States: N. p., 2021. 
        Web.

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                    Conway, Adam, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui, Voss, Lars, & Chowdhury, Srabanti. Three dimensional vertically structured MISFET/MESFET.  United States.

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                    Conway, Adam, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui, Voss, Lars, and Chowdhury, Srabanti. Tue .  
        "Three dimensional vertically structured MISFET/MESFET".  United States.  https://www.osti.gov/servlets/purl/1805436.

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@article{osti_1805436,

  title        = {Three dimensional vertically structured MISFET/MESFET},

  author       = {Conway, Adam and Harrison, Sara Elizabeth and Nikolic, Rebecca J. and Shao, Qinghui and Voss, Lars and Chowdhury, Srabanti},

  abstractNote = {According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2021},

  month        = {1}

}

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Similar Records

Title: Three dimensional vertically structured MISFET/MESFET

Abstract

Citation Formats

Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same patent-application, April 2008

Vertical junction field effect power transistor patent-application, March 2005

Integrated semiconductor device patent, May 1980

Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4) patent, October 2013

Three-dimensional boron particle loaded thermal neutron detector patent-application, March 2013

Methods Of Forming Pluralities Of Vertical Transistors, And Methods Of Forming Memory Arrays patent-application, March 2012

Three Dimensional Vertically structured Electronic Devices patent-application, July 2017

Three Dimensional Vertically Structured Electronic Devices patent-application, August 2017

SIC semiconductor device and method for manufacturing the same patent-application, October 2007

Semiconductor Structures with Pair(s) of Vertical Field Effect Transistors, Each Pair Having a Shared Source/Drain Region and Methods of Forming the Structures patent-application, August 2015

Self-aligned trench MOS junction field-effect transistor for high-frequency applications patent-application, November 2004

Graded Heterojunction Nanowire Device patent-application, May 2016

Nitride Semiconductor Device, Nitride Semiconductor Package, and Method for Manufacturing Nitride Semiconductor Device patent-application, April 2010

Stress reduction for pillar filled structures patent-application, July 2013

Asymmetric Semiconductor Device patent-application, March 2015

Vertical tunneling field-effect transistor cell and fabricating the same patent, June 2014

Silicon carbide switching device with rectifying-gate patent, March 1995

Electronic Devices Including A III-V Transistor Having A Homostructure And A Process Of Forming The Same patent-application, October 2016

Semiconductor Device and Method for Manufacturing the Same patent-application, January 2010

Power semiconductor switch patent-application, September 2006

Method to planarize three-dimensional structures to enable conformal electrodes patent, November 2012

Semiconductor Arrangement patent-application, March 2015

Methods of Making Vertical Junction Field Effect Transistors and Bipolar Junction Transistors without Ion Implantation and Devices made Therewith patent-application, December 2010

Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same
patent-application, April 2008

Vertical junction field effect power transistor
patent-application, March 2005

Integrated semiconductor device
patent, May 1980

Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4)
patent, October 2013

Three-dimensional boron particle loaded thermal neutron detector
patent-application, March 2013

Methods Of Forming Pluralities Of Vertical Transistors, And Methods Of Forming Memory Arrays
patent-application, March 2012

Three Dimensional Vertically structured Electronic Devices
patent-application, July 2017

Three Dimensional Vertically Structured Electronic Devices
patent-application, August 2017

SIC semiconductor device and method for manufacturing the same
patent-application, October 2007

Semiconductor Structures with Pair(s) of Vertical Field Effect Transistors, Each Pair Having a Shared Source/Drain Region and Methods of Forming the Structures
patent-application, August 2015

Self-aligned trench MOS junction field-effect transistor for high-frequency applications
patent-application, November 2004

Graded Heterojunction Nanowire Device
patent-application, May 2016

Nitride Semiconductor Device, Nitride Semiconductor Package, and Method for Manufacturing Nitride Semiconductor Device
patent-application, April 2010

Stress reduction for pillar filled structures
patent-application, July 2013

Asymmetric Semiconductor Device
patent-application, March 2015

Vertical tunneling field-effect transistor cell and fabricating the same
patent, June 2014

Silicon carbide switching device with rectifying-gate
patent, March 1995

Electronic Devices Including A III-V Transistor Having A Homostructure And A Process Of Forming The Same
patent-application, October 2016

Semiconductor Device and Method for Manufacturing the Same
patent-application, January 2010

Power semiconductor switch
patent-application, September 2006

Method to planarize three-dimensional structures to enable conformal electrodes
patent, November 2012

Semiconductor Arrangement
patent-application, March 2015

Methods of Making Vertical Junction Field Effect Transistors and Bipolar Junction Transistors without Ion Implantation and Devices made Therewith
patent-application, December 2010