Doped gate dielectric materials
Abstract
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
- Inventors:
- Issue Date:
- Research Org.:
- HRL Labs., LLC, Malibu, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805435
- Patent Number(s):
- 10903333
- Application Number:
- 15/663,584
- Assignee:
- HRL Laboratories, LLC (Malibu, CA)
- DOE Contract Number:
- AR000450
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 07/28/2017
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Cao, Yu, Chu, Rongming, and Li, Zijian Ray. Doped gate dielectric materials. United States: N. p., 2021.
Web.
Cao, Yu, Chu, Rongming, & Li, Zijian Ray. Doped gate dielectric materials. United States.
Cao, Yu, Chu, Rongming, and Li, Zijian Ray. Tue .
"Doped gate dielectric materials". United States. https://www.osti.gov/servlets/purl/1805435.
@article{osti_1805435,
title = {Doped gate dielectric materials},
author = {Cao, Yu and Chu, Rongming and Li, Zijian Ray},
abstractNote = {A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {1}
}
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