Formation of antireflective surfaces
Abstract
Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805346
- Patent Number(s):
- 10882739
- Application Number:
- 16/123,083
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY)
- DOE Contract Number:
- AC02-98CH10886
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 09/06/2018
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Black, Charles T., Rahman, Atikur, Eisaman, Matthew D., and Ashraf, Ahsan. Formation of antireflective surfaces. United States: N. p., 2021.
Web.
Black, Charles T., Rahman, Atikur, Eisaman, Matthew D., & Ashraf, Ahsan. Formation of antireflective surfaces. United States.
Black, Charles T., Rahman, Atikur, Eisaman, Matthew D., and Ashraf, Ahsan. Tue .
"Formation of antireflective surfaces". United States. https://www.osti.gov/servlets/purl/1805346.
@article{osti_1805346,
title = {Formation of antireflective surfaces},
author = {Black, Charles T. and Rahman, Atikur and Eisaman, Matthew D. and Ashraf, Ahsan},
abstractNote = {Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {1}
}