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Title: Oxide layers and methods of making the same

Abstract

The present application discloses devices that include a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Inventors:
; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771774
Patent Number(s):
10879012
Application Number:
15/997,403
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/04/2018
Country of Publication:
United States
Language:
English

Citation Formats

Schulz, Philip, Berry, Joseph Jonathan, Dameron, Arrelaine Allen, and Ndione, Paul Francois. Oxide layers and methods of making the same. United States: N. p., 2020. Web.
Schulz, Philip, Berry, Joseph Jonathan, Dameron, Arrelaine Allen, & Ndione, Paul Francois. Oxide layers and methods of making the same. United States.
Schulz, Philip, Berry, Joseph Jonathan, Dameron, Arrelaine Allen, and Ndione, Paul Francois. Tue . "Oxide layers and methods of making the same". United States. https://www.osti.gov/servlets/purl/1771774.
@article{osti_1771774,
title = {Oxide layers and methods of making the same},
author = {Schulz, Philip and Berry, Joseph Jonathan and Dameron, Arrelaine Allen and Ndione, Paul Francois},
abstractNote = {The present application discloses devices that include a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {12}
}

Works referenced in this record:

Substrate-controlled band positions in CH 3 NH 3 PbI 3 perovskite films
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Atomic layer deposition of Al 2 O 3 for single electron transistors utilizing Pt oxidation and reduction
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  • McConnell, Michael S.; Schneider, Louisa C.; Karbasian, Golnaz
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
  • https://doi.org/10.1116/1.4937992

Advances in the Application of Atomic Layer Deposition for Organometal Halide Perovskite Solar Cells
journal, September 2016


Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone
journal, May 2016


Highly efficient planar perovskite solar cells through band alignment engineering
journal, January 2015


Electronic Level Alignment in Inverted Organometal Perovskite Solar Cells
journal, March 2015


Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
journal, January 2017


Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
journal, January 2016