Photonic near infrared heater
Abstract
A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO).
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1771754
- Patent Number(s):
- 10873991
- Application Number:
- 15/879,885
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05B - ELECTRIC HEATING
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 01/25/2018
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Prasher, Ravi Shankar, Wang, Hao, and Freedman, Justin Palmer. Photonic near infrared heater. United States: N. p., 2020.
Web.
Prasher, Ravi Shankar, Wang, Hao, & Freedman, Justin Palmer. Photonic near infrared heater. United States.
Prasher, Ravi Shankar, Wang, Hao, and Freedman, Justin Palmer. Tue .
"Photonic near infrared heater". United States. https://www.osti.gov/servlets/purl/1771754.
@article{osti_1771754,
title = {Photonic near infrared heater},
author = {Prasher, Ravi Shankar and Wang, Hao and Freedman, Justin Palmer},
abstractNote = {A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {12}
}
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