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Title: Fast topological switch using strained Weyl semimetals

Abstract

A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771718
Patent Number(s):
10861995
Application Number:
16/559,331
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/03/2019
Country of Publication:
United States
Language:
English

Citation Formats

Sie, Edbert J., Nyby, Clara M., Pemmaraju, Sri C. D., Wang, Xijie, and Lindenberg, Aaron M. Fast topological switch using strained Weyl semimetals. United States: N. p., 2020. Web.
Sie, Edbert J., Nyby, Clara M., Pemmaraju, Sri C. D., Wang, Xijie, & Lindenberg, Aaron M. Fast topological switch using strained Weyl semimetals. United States.
Sie, Edbert J., Nyby, Clara M., Pemmaraju, Sri C. D., Wang, Xijie, and Lindenberg, Aaron M. Tue . "Fast topological switch using strained Weyl semimetals". United States. https://www.osti.gov/servlets/purl/1771718.
@article{osti_1771718,
title = {Fast topological switch using strained Weyl semimetals},
author = {Sie, Edbert J. and Nyby, Clara M. and Pemmaraju, Sri C. D. and Wang, Xijie and Lindenberg, Aaron M.},
abstractNote = {A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {12}
}

Works referenced in this record:

Nanoscale high-performance topological inductor
patent, December 2017


Phase patterning for ohmic homojunction contact in MoTe2
journal, August 2015


Direct Observation at Room Temperature of the Orthorhombic Weyl Semimetal Phase in Thin Epitaxial MoTe 2
journal, June 2018