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Title: Fast topological switch using strained Weyl semimetals

Abstract

A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771718
Patent Number(s):
10861995
Application Number:
16/559,331
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/03/2019
Country of Publication:
United States
Language:
English

Citation Formats

Sie, Edbert J., Nyby, Clara M., Pemmaraju, Sri C. D., Wang, Xijie, and Lindenberg, Aaron M. Fast topological switch using strained Weyl semimetals. United States: N. p., 2020. Web.
Sie, Edbert J., Nyby, Clara M., Pemmaraju, Sri C. D., Wang, Xijie, & Lindenberg, Aaron M. Fast topological switch using strained Weyl semimetals. United States.
Sie, Edbert J., Nyby, Clara M., Pemmaraju, Sri C. D., Wang, Xijie, and Lindenberg, Aaron M. Tue . "Fast topological switch using strained Weyl semimetals". United States. https://www.osti.gov/servlets/purl/1771718.
@article{osti_1771718,
title = {Fast topological switch using strained Weyl semimetals},
author = {Sie, Edbert J. and Nyby, Clara M. and Pemmaraju, Sri C. D. and Wang, Xijie and Lindenberg, Aaron M.},
abstractNote = {A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {12}
}

Works referenced in this record:

Nanoscale high-performance topological inductor
patent, December 2017


Phase patterning for ohmic homojunction contact in MoTe2
journal, August 2015


Far-infrared Detection Using Weyl Semimetals
patent-application, January 2018


Method for Making Semimetal Compound of PT
patent-application, March 2018


Method For Production And Identification Of Weyl Semimetal
patent-application, May 2017


Optical Information Recording Medium, Method for Manufacturing the Same, and Initialization Device
patent-application, January 2003


Ferroelectric Strain Based Phase-change Device
patent-application, December 2009


Direct Observation at Room Temperature of the Orthorhombic Weyl Semimetal Phase in Thin Epitaxial MoTe 2
journal, June 2018