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Title: Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Abstract

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of Houston, TX (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771566
Patent Number(s):
10818832
Application Number:
15/627,593
Assignee:
University of Houston System (Houston, TX); Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
EE0005806
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/20/2017
Country of Publication:
United States
Language:
English

Citation Formats

Jie, Qing, Ren, Zhifeng, and Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States: N. p., 2020. Web.
Jie, Qing, Ren, Zhifeng, & Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States.
Jie, Qing, Ren, Zhifeng, and Chen, Gang. Tue . "Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices". United States. https://www.osti.gov/servlets/purl/1771566.
@article{osti_1771566,
title = {Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices},
author = {Jie, Qing and Ren, Zhifeng and Chen, Gang},
abstractNote = {Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {10}
}

Works referenced in this record:

Development of Skutterudite Thermoelectric Materials and Modules
journal, February 2012


Improvements in Thermal Stability of Cobalt-Silicide Films by Adding Nickel
journal, January 2008


Skutterudite Unicouple Characterization for Energy Harvesting Applications
journal, September 2012


Thermoelectric materials with filled skutterudite structure for thermoelectric devices
patent, May 2000