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Title: Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes

Abstract

A monolithically-integrated AC switch includes a semiconductor substrate having first and second insulated-gate field effect transistors therein, which contain first and second spaced-apart and independently-controllable source terminals extending adjacent a first surface of the semiconductor substrate, yet share a common drain electrode extending adjacent a second surface of the semiconductor substrate. According to some of these embodiments of the invention, the first and second insulated-gate field effect transistors include respective first and second independently-controllable gate electrodes, which extend adjacent the first surface. The first and second insulated-gate field effect transistors may be configured as first and second vertical power MOSFETs, respectively. The semiconductor substrate may also include at least one edge termination region therein, which extends between the first and second vertical power MOSFETs.

Inventors:
Issue Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771511
Patent Number(s):
10804393
Application Number:
16/434,713
Assignee:
North Carolina State University (Raleigh, NC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
EE0006521
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/07/2019
Country of Publication:
United States
Language:
English

Citation Formats

Baliga, Bantval Jayant. Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes. United States: N. p., 2020. Web.
Baliga, Bantval Jayant. Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes. United States.
Baliga, Bantval Jayant. Tue . "Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes". United States. https://www.osti.gov/servlets/purl/1771511.
@article{osti_1771511,
title = {Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes},
author = {Baliga, Bantval Jayant},
abstractNote = {A monolithically-integrated AC switch includes a semiconductor substrate having first and second insulated-gate field effect transistors therein, which contain first and second spaced-apart and independently-controllable source terminals extending adjacent a first surface of the semiconductor substrate, yet share a common drain electrode extending adjacent a second surface of the semiconductor substrate. According to some of these embodiments of the invention, the first and second insulated-gate field effect transistors include respective first and second independently-controllable gate electrodes, which extend adjacent the first surface. The first and second insulated-gate field effect transistors may be configured as first and second vertical power MOSFETs, respectively. The semiconductor substrate may also include at least one edge termination region therein, which extends between the first and second vertical power MOSFETs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {10}
}

Works referenced in this record:

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