Title: Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes

Abstract

A monolithically-integrated AC switch includes a semiconductor substrate having first and second insulated-gate field effect transistors therein, which contain first and second spaced-apart and independently-controllable source terminals extending adjacent a first surface of the semiconductor substrate, yet share a common drain electrode extending adjacent a second surface of the semiconductor substrate. According to some of these embodiments of the invention, the first and second insulated-gate field effect transistors include respective first and second independently-controllable gate electrodes, which extend adjacent the first surface. The first and second insulated-gate field effect transistors may be configured as first and second vertical power MOSFETs, respectively. The semiconductor substrate may also include at least one edge termination region therein, which extends between the first and second vertical power MOSFETs.

Inventors:

Baliga, Bantval Jayant

Issue Date:

2020-10-13

Research Org.:

North Carolina State Univ., Raleigh, NC (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1771511

Patent Number(s):

10804393

Application Number:

16/434,713

Assignee:

North Carolina State University (Raleigh, NC)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/66666 - {Vertical transistors
H01L29/0878 - {Impurity concentration or distribution}
H01L29/41775 - {characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode}
H01L29/6656 - {using multiple spacer layers, e.g. multiple sidewall spacers}
H01L29/7823 - {with an edge termination structure
H01L29/42376 - {characterised by the length or the sectional shape}
H01L29/7811 - {with an edge termination structure
H01L29/7827 - {Vertical transistors
H01L29/1608 - {Silicon carbide}
H01L29/7836 - {with a significant overlap between the lightly doped extension and the gate electrode
H01L29/6659 - {with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET}
H01L29/66068 - {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
H01L29/7802 - {Vertical DMOS transistors, i.e. VDMOS transistors}
H01L29/1095 - {Body region, i.e. base region, of DMOS transistors or IGBTs

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DOE Contract Number:  

EE0006521

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/07/2019

Country of Publication:

United States

Language:

English