Title: Chalcogen back surface field layer

Abstract

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Inventors:

Antunez, Priscilla D.; Ek, Bruce A.; Haight, Richard A.; Mankad, Ravin; Singh, Saurabh; Todorov, Teodor K.

Issue Date:

Tue Sep 29 00:00:00 EDT 2020

Research Org.:

International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1735322

Patent Number(s):

10790398

Application Number:

16/009,098

Assignee:

International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/02167 - {for solar cells}
H01L31/022425 - {for solar cells}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/1864 - {Annealing}
H01L31/1868 - {Passivation}
H01L31/1884 - {Manufacture of transparent electrodes, e.g. TCO, ITO}
H01L31/1896 - {for thin-film semiconductors}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:  

EE0006334

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/14/2018

Country of Publication:

United States

Language:

English

Subject:

14 SOLAR ENERGY; 42 ENGINEERING