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Title: Methods of forming interdigitated back contact solar cells

Abstract

Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735168
Patent Number(s):
10749052
Application Number:
15/895,183
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 02/13/2018
Country of Publication:
United States
Language:
English

Citation Formats

Young, David Levi, Steiner, Myles A., and Simon, John D. Methods of forming interdigitated back contact solar cells. United States: N. p., 2020. Web.
Young, David Levi, Steiner, Myles A., & Simon, John D. Methods of forming interdigitated back contact solar cells. United States.
Young, David Levi, Steiner, Myles A., and Simon, John D. Tue . "Methods of forming interdigitated back contact solar cells". United States. https://www.osti.gov/servlets/purl/1735168.
@article{osti_1735168,
title = {Methods of forming interdigitated back contact solar cells},
author = {Young, David Levi and Steiner, Myles A. and Simon, John D.},
abstractNote = {Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {8}
}

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