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Title: Thin film CZTSSe photovoltaic device

Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:
; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735167
Patent Number(s):
10749050
Application Number:
15/401,381
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/09/2017
Country of Publication:
United States
Language:
English

Citation Formats

Haight, Richard A., Hannon, James B., and Oida, Satoshi. Thin film CZTSSe photovoltaic device. United States: N. p., 2020. Web.
Haight, Richard A., Hannon, James B., & Oida, Satoshi. Thin film CZTSSe photovoltaic device. United States.
Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue . "Thin film CZTSSe photovoltaic device". United States. https://www.osti.gov/servlets/purl/1735167.
@article{osti_1735167,
title = {Thin film CZTSSe photovoltaic device},
author = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},
abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {8}
}

Works referenced in this record:

Layer-Resolved Graphene Transfer via Engineered Strain Layers
journal, October 2013


Quaternary chalcogenide wafers
patent, July 2013


Quaternary chalcogenide wafers
patent, April 2014


GaSe Formation at the Cu(In,Ga)Se2/Mo Interface-A Novel Approach for Flexible Solar Cells by Easy Mechanical Lift-Off
journal, May 2014


Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons
journal, February 2012


Crack-tolerant photovoltaic cell structure and fabrication method
patent, July 2017


Improving Silicon Crystallinity by Grain Reorientation Annealing
journal, January 2009


Package-Free Flexible Organic Solar Cells with Graphene top Electrodes
journal, April 2013


Electrospun Cu 2 ZnSnS 4 microfibers with strong (112) preferred orientation: fabrication and characterization
journal, January 2015


Thin film photovoltaic structure
patent-application, December 2007


Thin film photovoltaic structure
patent-application, December 2007


Method to form a photovoltaic cell comprising a thin lamina
patent, July 2013