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Title: Mesoporous nanocrystalline film architecture for capacitive storage devices

Abstract

A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735141
Patent Number(s):
10741337
Application Number:
15/919,295
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
DOE Contract Number:  
SC0014213
Resource Type:
Patent
Resource Relation:
Patent File Date: 03/13/2018
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE

Citation Formats

Dunn, Bruce S., Tolbert, Sarah H., Wang, John, Brezesinski, Torsten, and Gruner, George. Mesoporous nanocrystalline film architecture for capacitive storage devices. United States: N. p., 2020. Web.
Dunn, Bruce S., Tolbert, Sarah H., Wang, John, Brezesinski, Torsten, & Gruner, George. Mesoporous nanocrystalline film architecture for capacitive storage devices. United States.
Dunn, Bruce S., Tolbert, Sarah H., Wang, John, Brezesinski, Torsten, and Gruner, George. Tue . "Mesoporous nanocrystalline film architecture for capacitive storage devices". United States. https://www.osti.gov/servlets/purl/1735141.
@article{osti_1735141,
title = {Mesoporous nanocrystalline film architecture for capacitive storage devices},
author = {Dunn, Bruce S. and Tolbert, Sarah H. and Wang, John and Brezesinski, Torsten and Gruner, George},
abstractNote = {A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {8}
}

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Mesoporous Nanocrystalline Film Architecture for Capacitive Storage Devices
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