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Title: Metal chalcogenides for pseudocapacitive applications

Abstract

A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735115
Patent Number(s):
10734649
Application Number:
15/359,996
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01M - PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
SC0001342; SC0014213
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/23/2016
Country of Publication:
United States
Language:
English

Citation Formats

Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, and Lin, Terri Chai. Metal chalcogenides for pseudocapacitive applications. United States: N. p., 2020. Web.
Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, & Lin, Terri Chai. Metal chalcogenides for pseudocapacitive applications. United States.
Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, and Lin, Terri Chai. Tue . "Metal chalcogenides for pseudocapacitive applications". United States. https://www.osti.gov/servlets/purl/1735115.
@article{osti_1735115,
title = {Metal chalcogenides for pseudocapacitive applications},
author = {Tolbert, Sarah H. and Dunn, Bruce S. and Cook, John and Kim, Hyung-seok and Lin, Terri Chai},
abstractNote = {A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {8}
}

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