Metal chalcogenides for pseudocapacitive applications
Abstract
A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1735115
- Patent Number(s):
- 10734649
- Application Number:
- 15/359,996
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01M - PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- DOE Contract Number:
- SC0001342; SC0014213
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/23/2016
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, and Lin, Terri Chai. Metal chalcogenides for pseudocapacitive applications. United States: N. p., 2020.
Web.
Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, & Lin, Terri Chai. Metal chalcogenides for pseudocapacitive applications. United States.
Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, and Lin, Terri Chai. Tue .
"Metal chalcogenides for pseudocapacitive applications". United States. https://www.osti.gov/servlets/purl/1735115.
@article{osti_1735115,
title = {Metal chalcogenides for pseudocapacitive applications},
author = {Tolbert, Sarah H. and Dunn, Bruce S. and Cook, John and Kim, Hyung-seok and Lin, Terri Chai},
abstractNote = {A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {8}
}
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