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Title: Methods of forming interdigitated back contact layers

Abstract

Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735029
Patent Number(s):
10714652
Application Number:
16/014,695
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/21/2018
Country of Publication:
United States
Language:
English

Citation Formats

Nemeth, William Michael, Stradins, Pauls, LaSalvia, Vincenzo Anthony, Page, Matthew Robert, and Young, David Levi. Methods of forming interdigitated back contact layers. United States: N. p., 2020. Web.
Nemeth, William Michael, Stradins, Pauls, LaSalvia, Vincenzo Anthony, Page, Matthew Robert, & Young, David Levi. Methods of forming interdigitated back contact layers. United States.
Nemeth, William Michael, Stradins, Pauls, LaSalvia, Vincenzo Anthony, Page, Matthew Robert, and Young, David Levi. Tue . "Methods of forming interdigitated back contact layers". United States. https://www.osti.gov/servlets/purl/1735029.
@article{osti_1735029,
title = {Methods of forming interdigitated back contact layers},
author = {Nemeth, William Michael and Stradins, Pauls and LaSalvia, Vincenzo Anthony and Page, Matthew Robert and Young, David Levi},
abstractNote = {Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}

Works referenced in this record:

Tandem solar cell
patent, December 2000


Solar cells and method for producing solar cells
patent, January 1990


Solar cell with back side contacts
patent, December 2013