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Title: Solid-state neutron detector

Abstract

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Texas Tech Univ., Lubbock, TX (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1735028
Patent Number(s):
10714651
Application Number:
16/170,500
Assignee:
Texas Tech University System (Lubbock, TX)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
DOE Contract Number:  
AR0000964
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/25/2018
Country of Publication:
United States
Language:
English

Citation Formats

Jiang, Hongxing, Lin, Jingyu, Li, Jing, Maity, Avisek, and Grenadier, Sam. Solid-state neutron detector. United States: N. p., 2020. Web.
Jiang, Hongxing, Lin, Jingyu, Li, Jing, Maity, Avisek, & Grenadier, Sam. Solid-state neutron detector. United States.
Jiang, Hongxing, Lin, Jingyu, Li, Jing, Maity, Avisek, and Grenadier, Sam. Tue . "Solid-state neutron detector". United States. https://www.osti.gov/servlets/purl/1735028.
@article{osti_1735028,
title = {Solid-state neutron detector},
author = {Jiang, Hongxing and Lin, Jingyu and Li, Jing and Maity, Avisek and Grenadier, Sam},
abstractNote = {A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}

Works referenced in this record:

Neutron-detecting apparatuses and methods of fabrication
patent, October 2015


Boron nitride solid state neutron detector
patent, April 2004


Fabricating radiation-detecting structures
patent, November 2017


High-efficiency neutron detectors and methods of making same
patent, January 2007


Method of fabricating a neutron detector such as a microstructured semiconductor neutron detector
patent, July 2014


Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
patent, July 2015