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Title: Complementary junction heterostructure field-effect transistor

Abstract

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia Corporation
OSTI Identifier:
170479
Patent Number(s):
5,479,033
Application Number:
PAN: 8-250,088
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 26 Dec 1995
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; FIELD EFFECT TRANSISTORS; DESIGN; MANUFACTURING; JUNCTION TRANSISTORS; CARRIER MOBILITY; OPTIMIZATION

Citation Formats

Baca, A G, Drummond, T J, Robertson, P J, and Zipperian, T E. Complementary junction heterostructure field-effect transistor. United States: N. p., 1995. Web.
Baca, A G, Drummond, T J, Robertson, P J, & Zipperian, T E. Complementary junction heterostructure field-effect transistor. United States.
Baca, A G, Drummond, T J, Robertson, P J, and Zipperian, T E. Tue . "Complementary junction heterostructure field-effect transistor". United States.
@article{osti_170479,
title = {Complementary junction heterostructure field-effect transistor},
author = {Baca, A G and Drummond, T J and Robertson, P J and Zipperian, T E},
abstractNote = {A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {12}
}