Title: Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes

Abstract

Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

Inventors:

Youtsey, Christopher; McCarthy, Robert

Issue Date:

2020-06-16

Research Org.:

MicroLink Devices, Inc., Niles, IL (United States)

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1651029

Patent Number(s):

10685843

Application Number:

16/044,448

Assignee:

MicroLink Devices, Inc. (Niles, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02389 - {Nitrides}
H01L21/02458 - {Nitrides}
H01L21/0254 - {Nitrides}
H01L21/02664 - {Aftertreatments
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30635 - {of AIIIBV compounds}
H01L21/67075 - {for wet etching}
H01L21/67086 - {with the semiconductor substrates being dipped in baths or vessels}
H01L21/78 - with subsequent division of the substrate into plural individual devices
H01L21/7813 - {leaving a reusable substrate, e.g. epitaxial lift off}
H01L29/2003 - {Nitride compounds}
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L33/0075 - {comprising nitride compounds}
H01L33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

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DOE Contract Number:  

AR0000446

Resource Type:

Patent

Resource Relation:

Patent File Date: 07/24/2018

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE