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Title: Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes

Abstract

Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

Inventors:
;
Issue Date:
Research Org.:
MicroLink Devices, Inc., Niles, IL (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1651029
Patent Number(s):
10685843
Application Number:
16/044,448
Assignee:
MicroLink Devices, Inc. (Niles, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000446
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/24/2018
Country of Publication:
United States
Language:
English

Citation Formats

Youtsey, Christopher, and McCarthy, Robert. Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes. United States: N. p., 2020. Web.
Youtsey, Christopher, & McCarthy, Robert. Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes. United States.
Youtsey, Christopher, and McCarthy, Robert. Tue . "Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes". United States. https://www.osti.gov/servlets/purl/1651029.
@article{osti_1651029,
title = {Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes},
author = {Youtsey, Christopher and McCarthy, Robert},
abstractNote = {Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {6}
}

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Works referenced in this record:

Photoelectrochemical wet etching of group III nitrides
patent, June 1998


Manufacturable thin film gallium and nitrogen containing devices
patent, May 2017