Radiation tolerant microstructured three dimensional semiconductor structure
Abstract
According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1651028
- Patent Number(s):
- 10685758
- Application Number:
- 15/494,219
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G21 - NUCLEAR PHYSICS G21H - OBTAINING ENERGY FROM RADIOACTIVE SOURCES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/21/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 25 ENERGY STORAGE
Citation Formats
Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., and Voss, Lars. Radiation tolerant microstructured three dimensional semiconductor structure. United States: N. p., 2020.
Web.
Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., & Voss, Lars. Radiation tolerant microstructured three dimensional semiconductor structure. United States.
Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., and Voss, Lars. Tue .
"Radiation tolerant microstructured three dimensional semiconductor structure". United States. https://www.osti.gov/servlets/purl/1651028.
@article{osti_1651028,
title = {Radiation tolerant microstructured three dimensional semiconductor structure},
author = {Frye, Clint and Henderson, Roger A. and Murphy, John Winter and Nikolic, Rebecca J. and Qu, Dongxia and Shao, Qinghui and Stoyer, Mark A. and Voss, Lars},
abstractNote = {According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {6}
}
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