skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Radiation tolerant microstructured three dimensional semiconductor structure

Abstract

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

Inventors:
; ; ; ; ; ; ;
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1651028
Patent Number(s):
10685758
Application Number:
15/494,219
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
G - PHYSICS G21 - NUCLEAR PHYSICS G21H - OBTAINING ENERGY FROM RADIOACTIVE SOURCES
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/21/2017
Country of Publication:
United States
Language:
English

Citation Formats

Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., and Voss, Lars. Radiation tolerant microstructured three dimensional semiconductor structure. United States: N. p., 2020. Web.
Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., & Voss, Lars. Radiation tolerant microstructured three dimensional semiconductor structure. United States.
Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., and Voss, Lars. Tue . "Radiation tolerant microstructured three dimensional semiconductor structure". United States. https://www.osti.gov/servlets/purl/1651028.
@article{osti_1651028,
title = {Radiation tolerant microstructured three dimensional semiconductor structure},
author = {Frye, Clint and Henderson, Roger A. and Murphy, John Winter and Nikolic, Rebecca J. and Qu, Dongxia and Shao, Qinghui and Stoyer, Mark A. and Voss, Lars},
abstractNote = {According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {6}
}

Patent:

Save / Share:

Works referenced in this record: