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Title: Bulk direct gap MoS2 by plasma induced layer decoupling

Abstract

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Univ. of Southern California, Los Angeles, CA (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1651011
Patent Number(s):
10680403
Application Number:
15/536,628
Assignee:
University of Southern California (Los Angeles, CA); The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
FG02-07ER46376
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/16/2015
Country of Publication:
United States
Language:
English

Citation Formats

Cronin, Stephen B., Dhall, Rohan, Lake, Roger, Li, Zhen, Neupane, Mahesh, and Wickramaratne, Darshana. Bulk direct gap MoS2 by plasma induced layer decoupling. United States: N. p., 2020. Web.
Cronin, Stephen B., Dhall, Rohan, Lake, Roger, Li, Zhen, Neupane, Mahesh, & Wickramaratne, Darshana. Bulk direct gap MoS2 by plasma induced layer decoupling. United States.
Cronin, Stephen B., Dhall, Rohan, Lake, Roger, Li, Zhen, Neupane, Mahesh, and Wickramaratne, Darshana. Tue . "Bulk direct gap MoS2 by plasma induced layer decoupling". United States. https://www.osti.gov/servlets/purl/1651011.
@article{osti_1651011,
title = {Bulk direct gap MoS2 by plasma induced layer decoupling},
author = {Cronin, Stephen B. and Dhall, Rohan and Lake, Roger and Li, Zhen and Neupane, Mahesh and Wickramaratne, Darshana},
abstractNote = {Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {6}
}

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Works referenced in this record:

Synthesis of layered metal sulfide ion-exchangers
patent, January 2016


Forms of transition metal dichalcogenides
patent, April 1989