Hybrid semiconductor-piezoacoustic radiofrequency device
Abstract
An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1650960
- Patent Number(s):
- 10666222
- Application Number:
- 15/718,817
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 09/28/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Eichenfield, Matt, Olsson, Roy H., Tauke-Pedretti, Anna, Leenheer, Andrew, Siddiqui, Aleem, and Friedmann, Thomas A. Hybrid semiconductor-piezoacoustic radiofrequency device. United States: N. p., 2020.
Web.
Eichenfield, Matt, Olsson, Roy H., Tauke-Pedretti, Anna, Leenheer, Andrew, Siddiqui, Aleem, & Friedmann, Thomas A. Hybrid semiconductor-piezoacoustic radiofrequency device. United States.
Eichenfield, Matt, Olsson, Roy H., Tauke-Pedretti, Anna, Leenheer, Andrew, Siddiqui, Aleem, and Friedmann, Thomas A. Tue .
"Hybrid semiconductor-piezoacoustic radiofrequency device". United States. https://www.osti.gov/servlets/purl/1650960.
@article{osti_1650960,
title = {Hybrid semiconductor-piezoacoustic radiofrequency device},
author = {Eichenfield, Matt and Olsson, Roy H. and Tauke-Pedretti, Anna and Leenheer, Andrew and Siddiqui, Aleem and Friedmann, Thomas A.},
abstractNote = {An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}
Works referenced in this record:
Elastic surface wave functional device and electronic circuit using the element
patent, April 2000
- Yamanouchi, Kazuhiko; Kuze, Naohiro; Shibata, Yoshihiko
- US Patent Document 6,046,524