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Title: Transition radiation light sources

Abstract

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650956
Patent Number(s):
10665447
Application Number:
16/294,015
Assignee:
BNNT, LLC (Newport News, VA); Jefferson Science Associates, LLC (Newport News, VA)
Patent Classifications (CPCs):
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC05-06OR23177
Resource Type:
Patent
Resource Relation:
Patent File Date: 03/06/2019
Country of Publication:
United States
Language:
English

Citation Formats

Jordan, Kevin C., Dushatinski, Thomas G., Smith, Michael W., Stevens, Jonathan C., and Whitney, R. Roy. Transition radiation light sources. United States: N. p., 2020. Web.
Jordan, Kevin C., Dushatinski, Thomas G., Smith, Michael W., Stevens, Jonathan C., & Whitney, R. Roy. Transition radiation light sources. United States.
Jordan, Kevin C., Dushatinski, Thomas G., Smith, Michael W., Stevens, Jonathan C., and Whitney, R. Roy. Tue . "Transition radiation light sources". United States. https://www.osti.gov/servlets/purl/1650956.
@article{osti_1650956,
title = {Transition radiation light sources},
author = {Jordan, Kevin C. and Dushatinski, Thomas G. and Smith, Michael W. and Stevens, Jonathan C. and Whitney, R. Roy},
abstractNote = {Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

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