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Title: Hyperuniform and nearly hyperuniform random network materials

Abstract

This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.

Inventors:
; ;
Issue Date:
Research Org.:
Princeton Univ., NJ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650937
Patent Number(s):
10662065
Application Number:
15/965,206
Assignee:
The Trustees of Princeton University (Princeton, NJ)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FG02-04ER46108
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/27/2018
Country of Publication:
United States
Language:
English

Citation Formats

Steinhardt, Paul Joseph, Torquato, Salvatore, and Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States: N. p., 2020. Web.
Steinhardt, Paul Joseph, Torquato, Salvatore, & Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States.
Steinhardt, Paul Joseph, Torquato, Salvatore, and Hejna, Miroslav. Tue . "Hyperuniform and nearly hyperuniform random network materials". United States. https://www.osti.gov/servlets/purl/1650937.
@article{osti_1650937,
title = {Hyperuniform and nearly hyperuniform random network materials},
author = {Steinhardt, Paul Joseph and Torquato, Salvatore and Hejna, Miroslav},
abstractNote = {This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

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Works referenced in this record:

Low temperature crystallization and pattering of amorphous silicon films
patent, September 1992


Highly solar-energy absorbing device and method of making the same
patent, February 1981