Hyperuniform and nearly hyperuniform random network materials
Abstract
This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.
- Inventors:
- Issue Date:
- Research Org.:
- Princeton Univ., NJ (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1650937
- Patent Number(s):
- 10662065
- Application Number:
- 15/965,206
- Assignee:
- The Trustees of Princeton University (Princeton, NJ)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-04ER46108
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/27/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE
Citation Formats
Steinhardt, Paul Joseph, Torquato, Salvatore, and Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States: N. p., 2020.
Web.
Steinhardt, Paul Joseph, Torquato, Salvatore, & Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States.
Steinhardt, Paul Joseph, Torquato, Salvatore, and Hejna, Miroslav. Tue .
"Hyperuniform and nearly hyperuniform random network materials". United States. https://www.osti.gov/servlets/purl/1650937.
@article{osti_1650937,
title = {Hyperuniform and nearly hyperuniform random network materials},
author = {Steinhardt, Paul Joseph and Torquato, Salvatore and Hejna, Miroslav},
abstractNote = {This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}
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Works referenced in this record:
Low temperature crystallization and pattering of amorphous silicon films
patent, September 1992
- Liu, Gang; Kakkad, Ramesh; Fonash, Stephen J.
- US Patent Document 5,147,826
Highly solar-energy absorbing device and method of making the same
patent, February 1981
- Gilbert, Laurence R.; Messier, Russell F.; Roy, Rustum
- US Patent Document 4,252,865