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Title: ScAIN etch mask for highly selective etching

Abstract

A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etch mask yielded a surface roughness of 0.6 μm compared to a surface roughness of 2.8 μm for an AlN etch mask.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1650902
Patent Number(s):
10651048
Application Number:
16/537,953
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/12/2019
Country of Publication:
United States
Language:
English

Citation Formats

Henry, Michael David, Young, Travis Ryan, and Douglas, Erica Ann. ScAIN etch mask for highly selective etching. United States: N. p., 2020. Web.
Henry, Michael David, Young, Travis Ryan, & Douglas, Erica Ann. ScAIN etch mask for highly selective etching. United States.
Henry, Michael David, Young, Travis Ryan, and Douglas, Erica Ann. Tue . "ScAIN etch mask for highly selective etching". United States. https://www.osti.gov/servlets/purl/1650902.
@article{osti_1650902,
title = {ScAIN etch mask for highly selective etching},
author = {Henry, Michael David and Young, Travis Ryan and Douglas, Erica Ann},
abstractNote = {A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etch mask yielded a surface roughness of 0.6 μm compared to a surface roughness of 2.8 μm for an AlN etch mask.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

Patent:

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