Method of fabricating an emitter region of a solar cell

Smith, David D.; Liu, Helen; Dennis, Tim; Manning, Jane; Luan, Hsin-Chiao; Waldhauer, Ann; Solomon, Genevieve A.; Malgapu, Brenda Pagulayan; Ramirez, Joseph

Title: Method of fabricating an emitter region of a solar cell

Abstract

Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.

Inventors:: Smith, David D.; Liu, Helen; Dennis, Tim; Manning, Jane; Luan, Hsin-Chiao; Waldhauer, Ann; Solomon, Genevieve A.; Malgapu, Brenda Pagulayan; Ramirez, Joseph

Issue Date:: 2020-04-21

Research Org.:: SunPower Corp., San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1650802

Patent Number(s):: 10629760

Application Number:: 15/601,929

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02167 - {for solar cells}
H01L31/0368 - including polycrystalline semiconductors
H01L31/0376 - including amorphous semiconductors
H01L31/062 - the potential barriers being only of the metal-insulator-semiconductor type
H01L31/0745 - comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}
H01L31/1864 - {Annealing}
H01L31/1872 - {Recrystallisation}
H01L31/1876 - {Particular processes or apparatus for batch treatment of the devices}
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Resource Relation:: Patent File Date: 05/22/2017

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats


                    Smith, David D., Liu, Helen, Dennis, Tim, Manning, Jane, Luan, Hsin-Chiao, Waldhauer, Ann, Solomon, Genevieve A., Malgapu, Brenda Pagulayan, and Ramirez, Joseph. Method of fabricating an emitter region of a solar cell.  United States: N. p., 2020. 
        Web.

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                    Smith, David D., Liu, Helen, Dennis, Tim, Manning, Jane, Luan, Hsin-Chiao, Waldhauer, Ann, Solomon, Genevieve A., Malgapu, Brenda Pagulayan, & Ramirez, Joseph. Method of fabricating an emitter region of a solar cell.  United States.

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                    Smith, David D., Liu, Helen, Dennis, Tim, Manning, Jane, Luan, Hsin-Chiao, Waldhauer, Ann, Solomon, Genevieve A., Malgapu, Brenda Pagulayan, and Ramirez, Joseph. Tue .  
        "Method of fabricating an emitter region of a solar cell".  United States.  https://www.osti.gov/servlets/purl/1650802.

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@article{osti_1650802,

  title        = {Method of fabricating an emitter region of a solar cell},

  author       = {Smith, David D. and Liu, Helen and Dennis, Tim and Manning, Jane and Luan, Hsin-Chiao and Waldhauer, Ann and Solomon, Genevieve A. and Malgapu, Brenda Pagulayan and Ramirez, Joseph},

  abstractNote = {Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {4}

}

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Works referenced in this record:

Back side contact solar cell with doped polysilicon regions
patent, December 2008

Swanson, Richard M.
US Patent Document 7,468,485
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7468485

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
patent-application, February 2008

Teppe, Andreas; Engelhart, Peter; Muller, Jorg
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In situ method for cleaning silicon surface and forming layer thereon in same chamber
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Beinglass, Israel
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Printed non-volatile memory
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Kamath, Arvind; Smith, Patrick; Cleeves, James M.
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Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
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Arya, Rajeewa R.
US Patent Document 6,121,541
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6121541

Base capacitor coupled photosensor with emitter tunnel oxide for very wide dynamic range in a contactless imaging array
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Bergemont, Albert; Mead, Carver A.; Chi, Min-hwa
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Solar cell having doped semiconductor heterojunction contacts
patent, June 2010

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Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, October 2010

Cousins, Peter John
US Patent Application 12/787319; 20100269904
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Removal of substrate perimeter material
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Koze, Jeffrey T.; Kuhn, Drew J.; LaBarre, John D.
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Low temperature production of large-grain polycrystalline semiconductors
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Naseem, Hameed A.; Albarghouti, Marwan
US Patent Document 7,202,143
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Title: Method of fabricating an emitter region of a solar cell

Abstract

Citation Formats

Back side contact solar cell with doped polysilicon regions patent, December 2008

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application, February 2008

In situ method for cleaning silicon surface and forming layer thereon in same chamber patent, October 1994

Printed non-volatile memory patent, May 2010

Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys patent, September 2000

Base capacitor coupled photosensor with emitter tunnel oxide for very wide dynamic range in a contactless imaging array patent, October 1996

Solar cell having doped semiconductor heterojunction contacts patent, June 2010

Solar Cell Having Doped Semiconductor Heterojunction Contacts patent-application, October 2010

Removal of substrate perimeter material patent, June 1995

Low temperature production of large-grain polycrystalline semiconductors patent, April 2007

Back side contact solar cell with doped polysilicon regions
patent, December 2008

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
patent-application, February 2008

In situ method for cleaning silicon surface and forming layer thereon in same chamber
patent, October 1994

Printed non-volatile memory
patent, May 2010

Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
patent, September 2000

Base capacitor coupled photosensor with emitter tunnel oxide for very wide dynamic range in a contactless imaging array
patent, October 1996

Solar cell having doped semiconductor heterojunction contacts
patent, June 2010

Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, October 2010

Removal of substrate perimeter material
patent, June 1995

Low temperature production of large-grain polycrystalline semiconductors
patent, April 2007