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Title: Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Abstract

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Inventors:
; ; ;
Issue Date:
Research Org.:
Monolith Semiconductor Inc., Round Rock, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650776
Patent Number(s):
10622472
Application Number:
16/455,316
Assignee:
Monolith Semiconductor Inc. (Round Rock, TX)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000442
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/27/2019
Country of Publication:
United States
Language:
English

Citation Formats

Matocha, Kevin Sean, Chowdhury, Sauvik, Chatty, Kiran V., and Nowak, John. Metal oxide semiconductor (MOS) controlled devices and methods of making the same. United States: N. p., 2020. Web.
Matocha, Kevin Sean, Chowdhury, Sauvik, Chatty, Kiran V., & Nowak, John. Metal oxide semiconductor (MOS) controlled devices and methods of making the same. United States.
Matocha, Kevin Sean, Chowdhury, Sauvik, Chatty, Kiran V., and Nowak, John. Tue . "Metal oxide semiconductor (MOS) controlled devices and methods of making the same". United States. https://www.osti.gov/servlets/purl/1650776.
@article{osti_1650776,
title = {Metal oxide semiconductor (MOS) controlled devices and methods of making the same},
author = {Matocha, Kevin Sean and Chowdhury, Sauvik and Chatty, Kiran V. and Nowak, John},
abstractNote = {Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}

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