Title: Method and system for preparing polycrystalline group III metal nitride

Abstract

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

Inventors:

Pocius, Douglas W.; Kamber, Derrick S.; D'Evelyn, Mark P.; Cook, Jonathan D.

Issue Date:

2020-04-14

Research Org.:

SLT Technologies, Inc., Los Angeles, CA (United States)

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1650763

Patent Number(s):

10619239

Application Number:

16/023,137

Assignee:

SLT Technologies, Inc. (Los Angeles, CA)

Patent Classifications (CPCs):

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B21/0632 - {with gallium, indium or thallium}

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2004/60 - Particles characterised by their size
C01P2004/90 - Other morphology not specified above
C01P2006/80 - Compositional purity

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/01 - on temporary substrates, e.g. substrates subsequently removed by etching
C23C16/303 - {Nitrides}
C23C16/4401 - {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber}
C23C16/4488 - {by in situ generation of reactive gas by chemical or electrochemical reaction}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/406 - {Gallium nitride}
C30B7/105 - {using ammonia as solvent, i.e. ammonothermal processes}

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DOE Contract Number:  

AR0000020

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/29/2018

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY