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Title: Method and device for using an organic underlayer to enable crystallization of disordered organic thin films

Abstract

Measurements on organic single crystals reveal remarkable optical and electrical characteristics compared to disordered films but practical device applications require uniform, pinhole-free films. Disclosed herein is a process to reliably convert as-deposited amorphous thin films to ones that are highly crystalline, with grains on the order of hundreds of microns. The disclosed method results in films that are pinhole-free and that possess grains that individually are single crystal domains.

Inventors:
; ;
Issue Date:
Research Org.:
Princeton Univ., NJ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650749
Patent Number(s):
10615345
Application Number:
15/612,049
Assignee:
The Trustees of Princeton University (Princeton, NJ)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
SC0012458
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/02/2017
Country of Publication:
United States
Language:
English

Citation Formats

Rand, Barry P., Fusella, Michael A., and Yang, Siyu. Method and device for using an organic underlayer to enable crystallization of disordered organic thin films. United States: N. p., 2020. Web.
Rand, Barry P., Fusella, Michael A., & Yang, Siyu. Method and device for using an organic underlayer to enable crystallization of disordered organic thin films. United States.
Rand, Barry P., Fusella, Michael A., and Yang, Siyu. Tue . "Method and device for using an organic underlayer to enable crystallization of disordered organic thin films". United States. https://www.osti.gov/servlets/purl/1650749.
@article{osti_1650749,
title = {Method and device for using an organic underlayer to enable crystallization of disordered organic thin films},
author = {Rand, Barry P. and Fusella, Michael A. and Yang, Siyu},
abstractNote = {Measurements on organic single crystals reveal remarkable optical and electrical characteristics compared to disordered films but practical device applications require uniform, pinhole-free films. Disclosed herein is a process to reliably convert as-deposited amorphous thin films to ones that are highly crystalline, with grains on the order of hundreds of microns. The disclosed method results in films that are pinhole-free and that possess grains that individually are single crystal domains.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}

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