skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Semiconductor power device including wire or ribbon bonds over device active region

Abstract

A semiconductor power device including a base plate; an input lead; an output lead; a field effect transistor (FET) power die disposed over the base plate, wherein the FET power die includes a set of source fingers, a set of drain fingers, and a set of gate fingers disposed directly over an active region, wherein the gate fingers are configured to receive an input signal from the input lead, and wherein the FET power die is configured to process the input signal to generate an output signal at the drain fingers for routing to the output lead; and electrical conductors (wirebonds or ribbons) bonded to the source and/or drain directly over the active region of the FET power die. The electrical conductors produce additional thermal paths between the active region and the base plate for thermal management of the FET power die.

Inventors:
Issue Date:
Research Org.:
Integra Technologies, Inc., El Segundo, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1637842
Patent Number(s):
10593610
Application Number:
16/027,074
Assignee:
Integra Technologies, Inc. (El Segundo, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
SC0017898
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/03/2018
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Formicone, Gabriele. Semiconductor power device including wire or ribbon bonds over device active region. United States: N. p., 2020. Web.
Formicone, Gabriele. Semiconductor power device including wire or ribbon bonds over device active region. United States.
Formicone, Gabriele. Tue . "Semiconductor power device including wire or ribbon bonds over device active region". United States. https://www.osti.gov/servlets/purl/1637842.
@article{osti_1637842,
title = {Semiconductor power device including wire or ribbon bonds over device active region},
author = {Formicone, Gabriele},
abstractNote = {A semiconductor power device including a base plate; an input lead; an output lead; a field effect transistor (FET) power die disposed over the base plate, wherein the FET power die includes a set of source fingers, a set of drain fingers, and a set of gate fingers disposed directly over an active region, wherein the gate fingers are configured to receive an input signal from the input lead, and wherein the FET power die is configured to process the input signal to generate an output signal at the drain fingers for routing to the output lead; and electrical conductors (wirebonds or ribbons) bonded to the source and/or drain directly over the active region of the FET power die. The electrical conductors produce additional thermal paths between the active region and the base plate for thermal management of the FET power die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {3}
}

Patent:

Save / Share:

Works referenced in this record: