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Title: Materials and methods for the preparation of nanocomposites

Abstract

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1637811
Patent Number(s):
10600865
Application Number:
15/882,823
Assignee:
The University of Chicago (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/29/2018
Country of Publication:
United States
Language:
English

Citation Formats

Nag, Angshuman, and Talapin, Dmitri V. Materials and methods for the preparation of nanocomposites. United States: N. p., 2020. Web.
Nag, Angshuman, & Talapin, Dmitri V. Materials and methods for the preparation of nanocomposites. United States.
Nag, Angshuman, and Talapin, Dmitri V. Tue . "Materials and methods for the preparation of nanocomposites". United States. https://www.osti.gov/servlets/purl/1637811.
@article{osti_1637811,
title = {Materials and methods for the preparation of nanocomposites},
author = {Nag, Angshuman and Talapin, Dmitri V.},
abstractNote = {Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {3}
}