Methods of preparing single-walled carbon nanotube networks

Avery, Azure Dee; Blackburn, Jeffrey Lee; Ferguson, Andrew John

Title: Methods of preparing single-walled carbon nanotube networks

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Abstract

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.

Inventors:: Avery, Azure Dee; Blackburn, Jeffrey Lee; Ferguson, Andrew John

Issue Date:: 2020-03-24

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1637802

Patent Number(s):: 10598614

Application Number:: 15/741,895

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L51/002 - {Making n- or p-doped regions}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/22 - comprising compounds containing boron, carbon, oxygen or nitrogen {or germanium or silicon, e.g. superconductors}
H01L51/0048 - {Carbon nanotubes}

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
G01N21/62 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
G01N2015/0038 - {Investigating nanoparticles}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/16 - including thermoelectric components with or without a junction of dissimilar materials

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B32/168 - After-treatment

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
G01N23/20 - by using diffraction of the radiation by the materials, e.g. for investigating crystal structure

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 07/13/2016

Country of Publication:: United States

Language:: English

Citation Formats


                    Avery, Azure Dee, Blackburn, Jeffrey Lee, and Ferguson, Andrew John. Methods of preparing single-walled carbon nanotube networks.  United States: N. p., 2020. 
        Web.

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                    Avery, Azure Dee, Blackburn, Jeffrey Lee, & Ferguson, Andrew John. Methods of preparing single-walled carbon nanotube networks.  United States.

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                    Avery, Azure Dee, Blackburn, Jeffrey Lee, and Ferguson, Andrew John. Tue .  
        "Methods of preparing single-walled carbon nanotube networks".  United States.  https://www.osti.gov/servlets/purl/1637802.

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@article{osti_1637802,

  title        = {Methods of preparing single-walled carbon nanotube networks},

  author       = {Avery, Azure Dee and Blackburn, Jeffrey Lee and Ferguson, Andrew John},

  abstractNote = {Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {3}

}

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Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.
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