Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Title: Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Abstract

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Inventors:: D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C.

Issue Date:: 2020-03-31

Research Org.:: SLT Technologies, Inc., Los Angeles, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1637760

Patent Number(s):: 10604865

Application Number:: 16/019,528

Assignee:: SLT Technologies, Inc. (Los Angeles, CA)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/04 - Pattern deposit, e.g. by using masks
C30B29/406 - {Gallium nitride}
C30B23/04 - Pattern deposit, e.g. by using masks
C30B19/02 - using molten solvents, e.g. flux
C30B7/105 - {using ammonia as solvent, i.e. ammonothermal processes}

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DOE Contract Number:: SC0006168

Resource Type:: Patent

Resource Relation:: Patent File Date: 06/26/2018

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules.  United States: N. p., 2020. 
        Web.

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                    D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., & Downey, Bradley C. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules.  United States.

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                    D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Tue .  
        "Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules".  United States.  https://www.osti.gov/servlets/purl/1637760.

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@article{osti_1637760,

  title        = {Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules},

  author       = {D'Evelyn, Mark P. and Ehrentraut, Dirk and Kamber, Derrick S. and Downey, Bradley C.},

  abstractNote = {Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {3}

}

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A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.
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Growth process for gallium nitride porous nanorods

Patent Wildeson, Isaac Harshman; Sands, Timothy David

A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed aftermore »« less
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Title: Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Abstract

Citation Formats

Method of hydrothermally growing quartz patent, June 1977

Molding system with integrated film heaters and sensors patent, July 2004

Flip-chip light emitting diode patent, October 2006

Bulk nitride mono-crystal including substrate for epitaxy patent, September 2008

Large-area bulk gallium nitride wafer and method of manufacture patent, November 2011

Large-Area Seed for Ammonothermal Growth of Bulk Gallium Nitride and Method of Manufacture patent-application, March 2010

High temperature high pressure capsule for processing materials in supercritical fluids patent, December 2009

Process and apparatus for the growth of nitride materials patent, June 2002

Method and apparatus for zinc oxide single crystal boule growth patent, October 2007

Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride patent, January 2007

Polycrystalline group III metal nitride with getter and method of making patent, June 2013

Low oxygen cubic boron nitride and its production patent, February 2006

Gallium nitride crystal and method of making same patent, August 2006

Heater, apparatus, and associated method patent, April 2010

Gallium nitride crystals and wafers and method of making patent, July 2006

Apparatus for growing homogeneous crystals patent, March 1992

High pressure/high temperature apparatus with improved temperature control for crystal growth patent, September 2006

Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride patent, April 2013

Nitride crystal with removable surface layer and methods of manufacture patent, April 2012

High pressure apparatus and method for nitride crystal growth patent, November 2012

Light Emitting Device with Phosphor Wavelength Conversion patent-application, October 2009

UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light patent, September 1998

Group III nitride compositions patent, August 2009

Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride patent, September 2011

Temperature control method and apparatus patent, January 1978

Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices patent, July 2013

Semiconductor laser device and method of fabricating the same patent-application, November 2007

Method for forming nitride crystals patent, January 2010

High pressure apparatus and method for nitride crystal growth patent, January 2012

Substrate for the epitaxial growth of gallium nitride patent, October 2012

Crystal growth apparatus and process patent, December 1992

High pressure apparatus with stackable rings patent, May 2013

Process for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules patent-application, February 2010

Apparatus for obtaining a bulk single crystal using supercritical ammonia patent, February 2008

Surface impurity-enriched diamond and method of making patent, May 2005

III-Phospide and III-Arsenide flip chip light-emitting devices patent, August 2004

Oxidized low density lipoprotein sensing device for gallium nitride process patent, July 2010

Apparatus for and method of handling crystals from crystal-growing furnaces patent, September 1982

Microcavity light emitting diode method of manufacture patent, January 2013

Method of fabrication of highly resistive GaN bulk crystals patent, August 2001

Process for the continuous production of aligned carbon nanotubes patent, January 2007

Ammonothermal method for growth of bulk gallium nitride patent, June 2013

Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride patent, May 2013

Heat-conducting thermoplastic compounds and uses thereof patent, November 2011

Methods for reducing contamination of semiconductor substrates patent, March 2003

III-V nitride substrate boule and method of making and using the same patent, July 2003

Circumferentially emitting luminaires and lens-elements formed by transverse-axis profile-sweeps patent-application, February 2005

High temperature high pressure capsule for processing materials in supercritical fluids patent, October 2006

Layered substrates for epitaxial processing, and device patent, April 2007

Light emitting device and method for making same patent, September 2006

Crystals for a semiconductor radiation detector and method for making the crystals patent, January 2008

Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride patent, August 2007

Crystalline gallium nitride and method for forming crystalline gallium nitride patent, June 2002

Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture patent, July 2011

Nitride crystal with removable surface layer and methods of manufacture patent, December 2012

Optoelectronic component and method for the manufacture of a plurality of optoelectronic components patent, July 2013

Bulk monocrystalline gallium nitride patent, December 2003

Nitride semiconductor light emitting device patent, February 2004

Homoepitaxial gallium-nitride-based light emitting device and method for producing patent, May 2006

Apparatus for making crystalline composition patent, May 2011

Process for the synthesis of diamond patent, October 2000

High pressure high temperature growth of crystalline group III metal nitrides patent, June 2006

Method of making Group III nitrides patent, June 2008

Bulk single crystal gallium nitride and method of making same patent, July 2004

Light emitting device with blue light LED and phosphor components patent, April 2006

Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer patent, December 2012

Apparatus for producing single crystal and quasi-single crystal, and associated method patent, May 2008

Method for growth of indium-containing nitride films patent, July 2013

LED with phosphor tile and overmolded phosphor in lens patent, December 2010

Method for reducing defect concentrations in crystals patent, February 2007

Group-III nitride semiconductor light-emitting device and production method thereof patent, September 2004

Sintered polycrystalline gallium nitride and its production patent, March 2005

Method and materials for growing III-nitride semiconductor compounds containing aluminum patent-application, April 2008

Apparatus for processing materials in supercritical fluids and methods thereof patent, April 2010

Semi-insulating GaN and method of making the same patent, January 2007

High indium containing InGaN substrates for long wavelength optical devices patent, November 2012

Method of hydrothermally growing quartz
patent, June 1977

Molding system with integrated film heaters and sensors
patent, July 2004

Flip-chip light emitting diode
patent, October 2006

Bulk nitride mono-crystal including substrate for epitaxy
patent, September 2008

Large-area bulk gallium nitride wafer and method of manufacture
patent, November 2011

Large-Area Seed for Ammonothermal Growth of Bulk Gallium Nitride and Method of Manufacture
patent-application, March 2010

High temperature high pressure capsule for processing materials in supercritical fluids
patent, December 2009

Process and apparatus for the growth of nitride materials
patent, June 2002

Method and apparatus for zinc oxide single crystal boule growth
patent, October 2007

Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
patent, January 2007

Polycrystalline group III metal nitride with getter and method of making
patent, June 2013

Low oxygen cubic boron nitride and its production
patent, February 2006

Gallium nitride crystal and method of making same
patent, August 2006

Heater, apparatus, and associated method
patent, April 2010

Gallium nitride crystals and wafers and method of making
patent, July 2006

Apparatus for growing homogeneous crystals
patent, March 1992

High pressure/high temperature apparatus with improved temperature control for crystal growth
patent, September 2006

Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
patent, April 2013

Nitride crystal with removable surface layer and methods of manufacture
patent, April 2012

High pressure apparatus and method for nitride crystal growth
patent, November 2012

Light Emitting Device with Phosphor Wavelength Conversion
patent-application, October 2009

UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
patent, September 1998

Group III nitride compositions
patent, August 2009

Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
patent, September 2011

Temperature control method and apparatus
patent, January 1978

Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
patent, July 2013

Semiconductor laser device and method of fabricating the same
patent-application, November 2007

Method for forming nitride crystals
patent, January 2010

High pressure apparatus and method for nitride crystal growth
patent, January 2012

Substrate for the epitaxial growth of gallium nitride
patent, October 2012

Crystal growth apparatus and process
patent, December 1992

High pressure apparatus with stackable rings
patent, May 2013

Process for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules
patent-application, February 2010

Apparatus for obtaining a bulk single crystal using supercritical ammonia
patent, February 2008

Surface impurity-enriched diamond and method of making
patent, May 2005

III-Phospide and III-Arsenide flip chip light-emitting devices
patent, August 2004

Oxidized low density lipoprotein sensing device for gallium nitride process
patent, July 2010

Apparatus for and method of handling crystals from crystal-growing furnaces
patent, September 1982

Microcavity light emitting diode method of manufacture
patent, January 2013

Method of fabrication of highly resistive GaN bulk crystals
patent, August 2001

Process for the continuous production of aligned carbon nanotubes
patent, January 2007

Ammonothermal method for growth of bulk gallium nitride
patent, June 2013

Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
patent, May 2013

Heat-conducting thermoplastic compounds and uses thereof
patent, November 2011

Methods for reducing contamination of semiconductor substrates
patent, March 2003

III-V nitride substrate boule and method of making and using the same
patent, July 2003

Circumferentially emitting luminaires and lens-elements formed by transverse-axis profile-sweeps
patent-application, February 2005

High temperature high pressure capsule for processing materials in supercritical fluids
patent, October 2006

Layered substrates for epitaxial processing, and device
patent, April 2007

Light emitting device and method for making same
patent, September 2006

Crystals for a semiconductor radiation detector and method for making the crystals
patent, January 2008

Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
patent, August 2007

Crystalline gallium nitride and method for forming crystalline gallium nitride
patent, June 2002

Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
patent, July 2011

Nitride crystal with removable surface layer and methods of manufacture
patent, December 2012

Optoelectronic component and method for the manufacture of a plurality of optoelectronic components
patent, July 2013

Bulk monocrystalline gallium nitride
patent, December 2003

Nitride semiconductor light emitting device
patent, February 2004

Homoepitaxial gallium-nitride-based light emitting device and method for producing
patent, May 2006

Apparatus for making crystalline composition
patent, May 2011

Process for the synthesis of diamond
patent, October 2000

High pressure high temperature growth of crystalline group III metal nitrides
patent, June 2006

Method of making Group III nitrides
patent, June 2008

Bulk single crystal gallium nitride and method of making same
patent, July 2004

Light emitting device with blue light LED and phosphor components
patent, April 2006

Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
patent, December 2012

Apparatus for producing single crystal and quasi-single crystal, and associated method
patent, May 2008

Method for growth of indium-containing nitride films
patent, July 2013

LED with phosphor tile and overmolded phosphor in lens
patent, December 2010

Method for reducing defect concentrations in crystals
patent, February 2007

Group-III nitride semiconductor light-emitting device and production method thereof
patent, September 2004

Sintered polycrystalline gallium nitride and its production
patent, March 2005

Method and materials for growing III-nitride semiconductor compounds containing aluminum
patent-application, April 2008

Apparatus for processing materials in supercritical fluids and methods thereof
patent, April 2010

Semi-insulating GaN and method of making the same
patent, January 2007

High indium containing InGaN substrates for long wavelength optical devices
patent, November 2012