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Title: Method for lithograghic patterning of sensitive materials

Abstract

Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).

Inventors:
; ; ;
Issue Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632641
Patent Number(s):
10581003
Application Number:
16/329,947
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/01/2017
Country of Publication:
United States
Language:
English

Citation Formats

Melosh, Nicholas Alexander, Angle, Matt R., Hanna, Mina-elraheb S., and Kong, Yifan. Method for lithograghic patterning of sensitive materials. United States: N. p., 2020. Web.
Melosh, Nicholas Alexander, Angle, Matt R., Hanna, Mina-elraheb S., & Kong, Yifan. Method for lithograghic patterning of sensitive materials. United States.
Melosh, Nicholas Alexander, Angle, Matt R., Hanna, Mina-elraheb S., and Kong, Yifan. Tue . "Method for lithograghic patterning of sensitive materials". United States. https://www.osti.gov/servlets/purl/1632641.
@article{osti_1632641,
title = {Method for lithograghic patterning of sensitive materials},
author = {Melosh, Nicholas Alexander and Angle, Matt R. and Hanna, Mina-elraheb S. and Kong, Yifan},
abstractNote = {Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {3}
}

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Works referenced in this record:

Materials and methods of forming controlled void
patent, September 2014


Method of manufacturing graphene by using germanium layer
patent, March 2014


Forming gate oxides having multiple thicknesses
patent, January 2007


Patterned lift-off of thin films deposited at high temperatures
patent, February 2014