Title: Oxide heterostructures having spatially separated electron-hole bilayers

Abstract

Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO3, a polar layer of LaAlO2, and a non-polar layer of SrTiO3. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.

Inventors:

Eom, Chang-Beom; Lee, Hyungwoo

Issue Date:

2020-03-03

Research Org.:

Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1632640

Patent Number(s):

10580872

Application Number:

15/596,505

Assignee:

Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/778 - with two-dimensional charge carrier gas channel, e.g. HEMT {
H01L29/7781 - {with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT}
H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L29/66969 - {of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

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DOE Contract Number:  

FG02-06ER46327

Resource Type:

Patent

Resource Relation:

Patent File Date: 05/16/2017

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY