Oxide heterostructures having spatially separated electron-hole bilayers
Abstract
Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO3, a polar layer of LaAlO2, and a non-polar layer of SrTiO3. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.
- Inventors:
- Issue Date:
- Research Org.:
- Wisconsin Alumni Research Foundation, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1632640
- Patent Number(s):
- 10580872
- Application Number:
- 15/596,505
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-06ER46327
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 05/16/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Eom, Chang-Beom, and Lee, Hyungwoo. Oxide heterostructures having spatially separated electron-hole bilayers. United States: N. p., 2020.
Web.
Eom, Chang-Beom, & Lee, Hyungwoo. Oxide heterostructures having spatially separated electron-hole bilayers. United States.
Eom, Chang-Beom, and Lee, Hyungwoo. Tue .
"Oxide heterostructures having spatially separated electron-hole bilayers". United States. https://www.osti.gov/servlets/purl/1632640.
@article{osti_1632640,
title = {Oxide heterostructures having spatially separated electron-hole bilayers},
author = {Eom, Chang-Beom and Lee, Hyungwoo},
abstractNote = {Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO3, a polar layer of LaAlO2, and a non-polar layer of SrTiO3. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {3}
}
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