Topological insulator-based high efficiency switching of magnetic unit, method and applications
Abstract
A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.
- Inventors:
- Issue Date:
- Research Org.:
- Johns Hopkins Univ., Baltimore, MD (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1632552
- Patent Number(s):
- 10559747
- Application Number:
- 15/497,591
- Assignee:
- The Johns Hopkins University (Baltimore, MD)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- SC0012670
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/26/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Li, Yufan, Ma, Qinli, and Chien, Chia-Ling. Topological insulator-based high efficiency switching of magnetic unit, method and applications. United States: N. p., 2020.
Web.
Li, Yufan, Ma, Qinli, & Chien, Chia-Ling. Topological insulator-based high efficiency switching of magnetic unit, method and applications. United States.
Li, Yufan, Ma, Qinli, and Chien, Chia-Ling. Tue .
"Topological insulator-based high efficiency switching of magnetic unit, method and applications". United States. https://www.osti.gov/servlets/purl/1632552.
@article{osti_1632552,
title = {Topological insulator-based high efficiency switching of magnetic unit, method and applications},
author = {Li, Yufan and Ma, Qinli and Chien, Chia-Ling},
abstractNote = {A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {2}
}
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