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Title: Topological insulator-based high efficiency switching of magnetic unit, method and applications

Abstract

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

Inventors:
; ;
Issue Date:
Research Org.:
Johns Hopkins Univ., Baltimore, MD (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632552
Patent Number(s):
10559747
Application Number:
15/497,591
Assignee:
The Johns Hopkins University (Baltimore, MD)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
DOE Contract Number:  
SC0012670
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/26/2017
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Li, Yufan, Ma, Qinli, and Chien, Chia-Ling. Topological insulator-based high efficiency switching of magnetic unit, method and applications. United States: N. p., 2020. Web.
Li, Yufan, Ma, Qinli, & Chien, Chia-Ling. Topological insulator-based high efficiency switching of magnetic unit, method and applications. United States.
Li, Yufan, Ma, Qinli, and Chien, Chia-Ling. Tue . "Topological insulator-based high efficiency switching of magnetic unit, method and applications". United States. https://www.osti.gov/servlets/purl/1632552.
@article{osti_1632552,
title = {Topological insulator-based high efficiency switching of magnetic unit, method and applications},
author = {Li, Yufan and Ma, Qinli and Chien, Chia-Ling},
abstractNote = {A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {2}
}

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Works referenced in this record:

Spin hall effect magnetic apparatus, method and applications
patent, August 2015


Spin logic device and electronic equipment including same
patent, December 2018


Spin current generation with nano-oscillator
patent, August 2016


Spin hall effect magnetic-RAM
patent, February 2015