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Title: Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device

Abstract

A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Cree, Inc., Durham, NC (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1632478
Patent Number(s):
10541306
Application Number:
13/610,993
Assignee:
Cree, Inc. (Durham, NC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000110
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/12/2012
Country of Publication:
United States
Language:
English

Citation Formats

O'Loughlin, Michael John, Cheng, Lin, Burk, Jr., Albert Augustus, Agarwal, Anant Kumar, and Suvorov, Alexander. Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device. United States: N. p., 2020. Web.
O'Loughlin, Michael John, Cheng, Lin, Burk, Jr., Albert Augustus, Agarwal, Anant Kumar, & Suvorov, Alexander. Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device. United States.
O'Loughlin, Michael John, Cheng, Lin, Burk, Jr., Albert Augustus, Agarwal, Anant Kumar, and Suvorov, Alexander. Tue . "Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device". United States. https://www.osti.gov/servlets/purl/1632478.
@article{osti_1632478,
title = {Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device},
author = {O'Loughlin, Michael John and Cheng, Lin and Burk, Jr., Albert Augustus and Agarwal, Anant Kumar and Suvorov, Alexander},
abstractNote = {A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}

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