Halometallate ligand-capped semiconductor nanocrystals
Abstract
Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Chicago, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1632477
- Patent Number(s):
- 10541134
- Application Number:
- 15/772,258
- Assignee:
- The University of Chicago (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- EE0005312
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/02/2016
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kurley, James, Zhang, Hao, Talapin, Dmitri V., Russell, Jake, and Hudson, Margaret Hervey. Halometallate ligand-capped semiconductor nanocrystals. United States: N. p., 2020.
Web.
Kurley, James, Zhang, Hao, Talapin, Dmitri V., Russell, Jake, & Hudson, Margaret Hervey. Halometallate ligand-capped semiconductor nanocrystals. United States.
Kurley, James, Zhang, Hao, Talapin, Dmitri V., Russell, Jake, and Hudson, Margaret Hervey. Tue .
"Halometallate ligand-capped semiconductor nanocrystals". United States. https://www.osti.gov/servlets/purl/1632477.
@article{osti_1632477,
title = {Halometallate ligand-capped semiconductor nanocrystals},
author = {Kurley, James and Zhang, Hao and Talapin, Dmitri V. and Russell, Jake and Hudson, Margaret Hervey},
abstractNote = {Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}
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