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Title: Halometallate ligand-capped semiconductor nanocrystals

Abstract

Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632477
Patent Number(s):
10541134
Application Number:
15/772,258
Assignee:
The University of Chicago (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
DOE Contract Number:  
EE0005312
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/02/2016
Country of Publication:
United States
Language:
English

Citation Formats

Kurley, James, Zhang, Hao, Talapin, Dmitri V., Russell, Jake, and Hudson, Margaret Hervey. Halometallate ligand-capped semiconductor nanocrystals. United States: N. p., 2020. Web.
Kurley, James, Zhang, Hao, Talapin, Dmitri V., Russell, Jake, & Hudson, Margaret Hervey. Halometallate ligand-capped semiconductor nanocrystals. United States.
Kurley, James, Zhang, Hao, Talapin, Dmitri V., Russell, Jake, and Hudson, Margaret Hervey. Tue . "Halometallate ligand-capped semiconductor nanocrystals". United States. https://www.osti.gov/servlets/purl/1632477.
@article{osti_1632477,
title = {Halometallate ligand-capped semiconductor nanocrystals},
author = {Kurley, James and Zhang, Hao and Talapin, Dmitri V. and Russell, Jake and Hudson, Margaret Hervey},
abstractNote = {Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}

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